Electrical properties of Ga ion beam implanted GaAs epilayer

Yoshiro Hirayama, Hiroshi Okamoto

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)


Resistivity enhancement by 5 orders or more was realized by Ga focused ion beam implantation into n+ and p+ GaAs epilayers. For originally n+ epilayers, this resistivity enhancement is maintained after annealing as high as 800°C. However this enhancement disappears after annealing at above 650°C for p+ epilayer. This property makes GaAs high resistive only in a limited area whose minimum dimension is 0.1 µm or less, and is attractive for a device fabrication process to electrically isolate integrated elements.

Original languageEnglish
Pages (from-to)L965-L967
JournalJapanese Journal of Applied Physics
Issue number12
Publication statusPublished - 1985 Dec


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