TY - JOUR
T1 - Electrical properties of the patterned Co/Cu/Co sub-micron dots using a probe contact
AU - Hayakawa, J.
AU - Fujimori, M.
AU - Heike, S.
AU - Ishibashi, M.
AU - Hashizume, T.
AU - Ito, K.
AU - Ohno, H.
PY - 2004/5
Y1 - 2004/5
N2 - Using conductive atomic force microscopy, we investigated the electrical properties of patterned Co/Cu/Co submicron dots which were aligned at 200 nm intervals. As a result, we observed the I-V character having hysteresis behavior; it was apparently due to a magnetization reversal caused by the spin transfer torque. We demonstrated that the probe technique was able to be one of the candidates of the future high-areal-density magnetic recording devices.
AB - Using conductive atomic force microscopy, we investigated the electrical properties of patterned Co/Cu/Co submicron dots which were aligned at 200 nm intervals. As a result, we observed the I-V character having hysteresis behavior; it was apparently due to a magnetization reversal caused by the spin transfer torque. We demonstrated that the probe technique was able to be one of the candidates of the future high-areal-density magnetic recording devices.
KW - Co/Cu/Co sub-micron dot
KW - Probe contact
KW - Spin transfer torque
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U2 - 10.1016/j.jmmm.2003.12.730
DO - 10.1016/j.jmmm.2003.12.730
M3 - Article
AN - SCOPUS:23144455716
SN - 0304-8853
VL - 272-276
SP - e1443-e1445
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
IS - SUPPL. 1
ER -