Electrical properties of ZnO/GaN heterostructures and photo-responsvity of ZnO layers

D. C. Oh; T. Suzuki; H. Makino; T. Hanada; H. J. Ko; T. Yao

doi:10.1002/pssc.200564758

Electrical properties of ZnO/GaN heterostructures and photo-responsvity of ZnO layers

D. C. Oh, T. Suzuki, H. Makino, T. Hanada, H. J. Ko, T. Yao

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

16 Citations (Scopus)

Abstract

We report on the electrical properties of ZnO/GaN heterostructures and the photoresponsivity of ZnO Schottky barrier diodes for the applications of heterojunction transistors and ultraviolet photodetectors, respectivly. ZnO/GaN heterostructures exhibit a large plateau region of 6.5 V in 10 kHz capacitance-voltage curves. Moreover, it is found that a high electron density of ∼ 10¹⁸ cm^-3 is accumulated at the heterointerface in depth profile. ZnO Schottky barrier diodes show a rapid increase of photocurrent of ∼10² A at the long-wavelength cutoff of 390 nm with maitaining stable diode characteristics. And, it is observed that ZnO Schottky barrier diodes respond to photosignal within 1 ∼ 2 msec with a time constant of 0.35 msec.

Original language	English
Pages (from-to)	946-951
Number of pages	6
Journal	Physica Status Solidi C: Conferences
Volume	3
Issue number	4
DOIs	https://doi.org/10.1002/pssc.200564758
Publication status	Published - 2006
Event	12th International Conference on II-VI Compounds - Warsaw, Poland Duration: 2005 Sept 12 → 2005 Sept 16

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200564758

Cite this

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title = "Electrical properties of ZnO/GaN heterostructures and photo-responsvity of ZnO layers",

abstract = "We report on the electrical properties of ZnO/GaN heterostructures and the photoresponsivity of ZnO Schottky barrier diodes for the applications of heterojunction transistors and ultraviolet photodetectors, respectivly. ZnO/GaN heterostructures exhibit a large plateau region of 6.5 V in 10 kHz capacitance-voltage curves. Moreover, it is found that a high electron density of ∼ 1018 cm-3 is accumulated at the heterointerface in depth profile. ZnO Schottky barrier diodes show a rapid increase of photocurrent of ∼102 A at the long-wavelength cutoff of 390 nm with maitaining stable diode characteristics. And, it is observed that ZnO Schottky barrier diodes respond to photosignal within 1 ∼ 2 msec with a time constant of 0.35 msec.",

author = "Oh, {D. C.} and T. Suzuki and H. Makino and T. Hanada and Ko, {H. J.} and T. Yao",

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journal = "Physica Status Solidi C: Conferences",

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note = "12th International Conference on II-VI Compounds ; Conference date: 12-09-2005 Through 16-09-2005",

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TY - JOUR

T1 - Electrical properties of ZnO/GaN heterostructures and photo-responsvity of ZnO layers

AU - Oh, D. C.

AU - Suzuki, T.

AU - Makino, H.

AU - Hanada, T.

AU - Ko, H. J.

AU - Yao, T.

PY - 2006

Y1 - 2006

N2 - We report on the electrical properties of ZnO/GaN heterostructures and the photoresponsivity of ZnO Schottky barrier diodes for the applications of heterojunction transistors and ultraviolet photodetectors, respectivly. ZnO/GaN heterostructures exhibit a large plateau region of 6.5 V in 10 kHz capacitance-voltage curves. Moreover, it is found that a high electron density of ∼ 1018 cm-3 is accumulated at the heterointerface in depth profile. ZnO Schottky barrier diodes show a rapid increase of photocurrent of ∼102 A at the long-wavelength cutoff of 390 nm with maitaining stable diode characteristics. And, it is observed that ZnO Schottky barrier diodes respond to photosignal within 1 ∼ 2 msec with a time constant of 0.35 msec.

AB - We report on the electrical properties of ZnO/GaN heterostructures and the photoresponsivity of ZnO Schottky barrier diodes for the applications of heterojunction transistors and ultraviolet photodetectors, respectivly. ZnO/GaN heterostructures exhibit a large plateau region of 6.5 V in 10 kHz capacitance-voltage curves. Moreover, it is found that a high electron density of ∼ 1018 cm-3 is accumulated at the heterointerface in depth profile. ZnO Schottky barrier diodes show a rapid increase of photocurrent of ∼102 A at the long-wavelength cutoff of 390 nm with maitaining stable diode characteristics. And, it is observed that ZnO Schottky barrier diodes respond to photosignal within 1 ∼ 2 msec with a time constant of 0.35 msec.

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DO - 10.1002/pssc.200564758

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EP - 951

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

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T2 - 12th International Conference on II-VI Compounds

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ER -

Electrical properties of ZnO/GaN heterostructures and photo-responsvity of ZnO layers

Abstract

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