Electrical resistance change with crystallization in Si-Te amorphous thin films

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The electrical resistance change of amorphous SixTe 100-x (x: 10-23) films during heating was investigated by a two-point probe method. The SixTe100-x films showed two-stage crystallization processes. The film was firstly crystallized to Te and subsequently crystallized to Si2Te3 with an electrical resistance drop. The first crystallization temperature Tx 1st slightly increased with increasing Si content, while the second crystallization temperature Tx2nd was independent on the composition and was a constant temperature of 310°C. In all films, the electrical resistance once increased in the temperature range from 250 to 295°C before the crystallization of the Si2Te3. This temporal resistance increase could be explained by considering a formation of high-resistivity Si-rich amorphous phase.

Original languageEnglish
Title of host publicationPhase-Change Materials for Memory and Reconfigurable Electronics Applications
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781617822186
Publication statusPublished - 2010

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


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