Electrical resistivity of Eu-rich EuO thin films

Toyohiko J. Konno; Kimio Wakoh; Kenji Sumiyama; Kenji Suzuki

doi:10.1143/jjap.37.l787

Electrical resistivity of Eu-rich EuO thin films

Toyohiko J. Konno, Kimio Wakoh, Kenji Sumiyama, Kenji Suzuki

Institute for Materials Research (IMR) (institute affiliation only)

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The electrical resistivity of Eu-rich EuO thin films was studied at temperatures 5 ≤ T ≤ 150K and magnetic fields 0 ≤ H ≤ 5T. We prepared two films with different degrees of off-stoichiometry using the method described previously. [Jpn. J. Appl. Phys. 35 (1996) 6052] The film richer in Eu exhibited an increase in Curie temperature of the bulk value of 70K to approximately 150K, and zero-field resistivity decreased from about 100 μΩ·m at 100K to 5 μΩ·m at 20K. The film's magnetoresistance exceeded - 80% in the 80-90K temperature range. These results show that the stable reproduction of EuO films with high levels of conductivity without the addition of a third element is now possible.

Original language	English
Pages (from-to)	L787-L788
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	7 PART A
DOIs	https://doi.org/10.1143/jjap.37.l787
Publication status	Published - 1998 Jul 1

Keywords

Electrical resistivity
EuO thin film
Magnetization
Magnetoresistance
Metal-insulator transition

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.37.l787

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title = "Electrical resistivity of Eu-rich EuO thin films",

abstract = "The electrical resistivity of Eu-rich EuO thin films was studied at temperatures 5 ≤ T ≤ 150K and magnetic fields 0 ≤ H ≤ 5T. We prepared two films with different degrees of off-stoichiometry using the method described previously. [Jpn. J. Appl. Phys. 35 (1996) 6052] The film richer in Eu exhibited an increase in Curie temperature of the bulk value of 70K to approximately 150K, and zero-field resistivity decreased from about 100 μΩ·m at 100K to 5 μΩ·m at 20K. The film's magnetoresistance exceeded - 80% in the 80-90K temperature range. These results show that the stable reproduction of EuO films with high levels of conductivity without the addition of a third element is now possible.",

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AU - Konno, Toyohiko J.

AU - Wakoh, Kimio

AU - Sumiyama, Kenji

AU - Suzuki, Kenji

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Y1 - 1998/7/1

N2 - The electrical resistivity of Eu-rich EuO thin films was studied at temperatures 5 ≤ T ≤ 150K and magnetic fields 0 ≤ H ≤ 5T. We prepared two films with different degrees of off-stoichiometry using the method described previously. [Jpn. J. Appl. Phys. 35 (1996) 6052] The film richer in Eu exhibited an increase in Curie temperature of the bulk value of 70K to approximately 150K, and zero-field resistivity decreased from about 100 μΩ·m at 100K to 5 μΩ·m at 20K. The film's magnetoresistance exceeded - 80% in the 80-90K temperature range. These results show that the stable reproduction of EuO films with high levels of conductivity without the addition of a third element is now possible.

AB - The electrical resistivity of Eu-rich EuO thin films was studied at temperatures 5 ≤ T ≤ 150K and magnetic fields 0 ≤ H ≤ 5T. We prepared two films with different degrees of off-stoichiometry using the method described previously. [Jpn. J. Appl. Phys. 35 (1996) 6052] The film richer in Eu exhibited an increase in Curie temperature of the bulk value of 70K to approximately 150K, and zero-field resistivity decreased from about 100 μΩ·m at 100K to 5 μΩ·m at 20K. The film's magnetoresistance exceeded - 80% in the 80-90K temperature range. These results show that the stable reproduction of EuO films with high levels of conductivity without the addition of a third element is now possible.

KW - Electrical resistivity

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KW - Magnetization

KW - Magnetoresistance

KW - Metal-insulator transition

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Electrical resistivity of Eu-rich EuO thin films

Abstract

Keywords

ASJC Scopus subject areas

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