Electrical resistivity of Eu-rich EuO thin films

Toyohiko J. Konno, Kimio Wakoh, Kenji Sumiyama, Kenji Suzuki

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The electrical resistivity of Eu-rich EuO thin films was studied at temperatures 5 ≤ T ≤ 150K and magnetic fields 0 ≤ H ≤ 5T. We prepared two films with different degrees of off-stoichiometry using the method described previously. [Jpn. J. Appl. Phys. 35 (1996) 6052] The film richer in Eu exhibited an increase in Curie temperature of the bulk value of 70K to approximately 150K, and zero-field resistivity decreased from about 100 μΩ·m at 100K to 5 μΩ·m at 20K. The film's magnetoresistance exceeded - 80% in the 80-90K temperature range. These results show that the stable reproduction of EuO films with high levels of conductivity without the addition of a third element is now possible.

Original languageEnglish
Pages (from-to)L787-L788
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number7 PART A
Publication statusPublished - 1998 Jul 1


  • Electrical resistivity
  • EuO thin film
  • Magnetization
  • Magnetoresistance
  • Metal-insulator transition

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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