Abstract
The carrier transport in monocrystalline SixGe1-x bulk alloys with X=0.03 and X=0.23 and in polycrystalline alloys with 0.12≤X≤0.5 grown by the Czochralski method was investigated by means of Hall effect and resistivity measurements. The defect arrangement in the samples was observed by preferential etching. With no impurity deliberately added grown alloys reveal acceptor properties with carrier concentration increasing from 3 × 1014 cm-3 for X=0.03 to 1.35 × 1015 cm-3 for X=0.5. In monocrystalline samples the acceptor level is located near to Ev+0.14eV. Hall mobility in the monocrystalline samples is affected by alloy scattering even at high temperatures. Grain boundaries strongly lower Hall mobility in the polycrystalline samples.
| Original language | English |
|---|---|
| Pages (from-to) | 353-358 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 196-201 |
| Issue number | pt 1 |
| Publication status | Published - 1995 Dec 1 |
| Event | Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Duration: 1995 Jul 23 → 1995 Jul 28 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering