TY - JOUR
T1 - Electrical transport properties of gate tunable graphene lateral tunnel diodes
AU - Shiga, Kanako
AU - Komiyama, Takahiro
AU - Fuse, Yoshiki
AU - Fukidome, Hirokazu
AU - Sato, Akira
AU - Otsuji, Taiichi
AU - Uchino, Takashi
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020
Y1 - 2020
N2 - A detailed study of the electrical transport properties of gate tunable graphene lateral tunnel diodes is presented. The graphene-Al2O3-graphene lateral tunnel diodes are fabricated on Si/SiO2 substrates, and the fabricated devices show rectifying characteristics at the low voltage below 1 V. The rectifying behavior can be controlled by applying back gate voltages. As a result, the devices show high asymmetry and strong nonlinearity current-voltage (I-V) characteristics, which are desirable properties for applications such as optical rectennas and infrared detectors. The electrical transport mechanism of the graphene lateral diodes is analyzed by extracting parameters from the measured I-V characteristics. We find that trap-assisted tunneling from the defect levels in the Al2O3 layer is the most likely mechanism of the forward current of the fabricated graphene lateral diodes.
AB - A detailed study of the electrical transport properties of gate tunable graphene lateral tunnel diodes is presented. The graphene-Al2O3-graphene lateral tunnel diodes are fabricated on Si/SiO2 substrates, and the fabricated devices show rectifying characteristics at the low voltage below 1 V. The rectifying behavior can be controlled by applying back gate voltages. As a result, the devices show high asymmetry and strong nonlinearity current-voltage (I-V) characteristics, which are desirable properties for applications such as optical rectennas and infrared detectors. The electrical transport mechanism of the graphene lateral diodes is analyzed by extracting parameters from the measured I-V characteristics. We find that trap-assisted tunneling from the defect levels in the Al2O3 layer is the most likely mechanism of the forward current of the fabricated graphene lateral diodes.
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U2 - 10.35848/1347-4065/ab83de
DO - 10.35848/1347-4065/ab83de
M3 - Article
AN - SCOPUS:85085692624
SN - 0021-4922
VL - 59
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - SI
M1 - SIID03
ER -