TY - JOUR
T1 - Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot
AU - Studenikin, Sergei
AU - Korkusinski, Marek
AU - Takahashi, Motoi
AU - Ducatel, Jordan
AU - Padawer-Blatt, Aviv
AU - Bogan, Alex
AU - Austing, D. Guy
AU - Gaudreau, Louis
AU - Zawadzki, Piotr
AU - Sachrajda, Andrew
AU - Hirayama, Yoshiro
AU - Tracy, Lisa
AU - Reno, John
AU - Hargett, Terry
N1 - Funding Information:
S.S. and A.B. thank the Natural Sciences and Engineering Research Council of Canada for financial support. M.T and Y.H. thank Tohoku University GP-Spin program for support. This work was performed in part at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility, and Sandia National Laboratories, a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA-0003525. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government.
Publisher Copyright:
© 2019, Crown.
PY - 2019/12/1
Y1 - 2019/12/1
N2 - Electrical tunability of the g-factor of a confined spin is a long-time goal of the spin qubit field. Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs double-dot device confining a hole. This tunability is a consequence of the strong spin-orbit interaction (SOI) in the GaAs valence band. The SOI enables a spin-flip interdot tunneling, which, in combination with the simple spin-conserving charge transport leads to the formation of tunable hybrid spin-orbit molecular states. EDSR is used to demonstrate that the gap separating the two lowest energy states changes its character from a charge-like to a spin-like excitation as a function of interdot detuning or magnetic field. In the spin-like regime, the gap can be characterized by the effective g-factor, which differs from the bulk value owing to spin-charge hybridization, and can be tuned smoothly and sensitively by gate voltages.
AB - Electrical tunability of the g-factor of a confined spin is a long-time goal of the spin qubit field. Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs double-dot device confining a hole. This tunability is a consequence of the strong spin-orbit interaction (SOI) in the GaAs valence band. The SOI enables a spin-flip interdot tunneling, which, in combination with the simple spin-conserving charge transport leads to the formation of tunable hybrid spin-orbit molecular states. EDSR is used to demonstrate that the gap separating the two lowest energy states changes its character from a charge-like to a spin-like excitation as a function of interdot detuning or magnetic field. In the spin-like regime, the gap can be characterized by the effective g-factor, which differs from the bulk value owing to spin-charge hybridization, and can be tuned smoothly and sensitively by gate voltages.
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U2 - 10.1038/s42005-019-0262-1
DO - 10.1038/s42005-019-0262-1
M3 - Article
AN - SCOPUS:85076460172
SN - 2399-3650
VL - 2
JO - Communications Physics
JF - Communications Physics
IS - 1
M1 - 159
ER -