Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot

Sergei Studenikin, Marek Korkusinski, Motoi Takahashi, Jordan Ducatel, Aviv Padawer-Blatt, Alex Bogan, D. Guy Austing, Louis Gaudreau, Piotr Zawadzki, Andrew Sachrajda, Yoshiro Hirayama, Lisa Tracy, John Reno, Terry Hargett

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Electrical tunability of the g-factor of a confined spin is a long-time goal of the spin qubit field. Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs double-dot device confining a hole. This tunability is a consequence of the strong spin-orbit interaction (SOI) in the GaAs valence band. The SOI enables a spin-flip interdot tunneling, which, in combination with the simple spin-conserving charge transport leads to the formation of tunable hybrid spin-orbit molecular states. EDSR is used to demonstrate that the gap separating the two lowest energy states changes its character from a charge-like to a spin-like excitation as a function of interdot detuning or magnetic field. In the spin-like regime, the gap can be characterized by the effective g-factor, which differs from the bulk value owing to spin-charge hybridization, and can be tuned smoothly and sensitively by gate voltages.

Original languageEnglish
Article number159
JournalCommunications Physics
Issue number1
Publication statusPublished - 2019 Dec 1


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