Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 Nanodevices

Azat Sulaev, Minggang Zeng, Shun Qing Shen, Soon Khuen Cho, Wei Guang Zhu, Yuan Ping Feng, Sergey V. Eremeev, Yoshiyuki Kawazoe, Lei Shen, Lan Wang

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51 Citations (Scopus)


We report tunable in-plane anisotropic magnetoresistance (AMR) in nanodevices based on topological insulator BiSbTeSe2 (BSTS) nanoflakes by electric gating. The AMR can be changed continuously from negative to positive when the Fermi level is manipulated to cross the Dirac point by an applied gate electric field. We also discuss effects of the gate electric field, current density, and magnetic field on the in-plane AMR with a simple physical model, which is based on the in-plane magnetic field induced shift of the spin-momentum locked topological two surface states that are coupled through side surfaces and bulk weak antilocalization (WAL). The large, tunable and bipolar in-plane AMR in BSTS devices provides the possibility of fabricating more sensitive logic and magnetic random access memory AMR devices.

Original languageEnglish
Pages (from-to)2061-2066
Number of pages6
JournalNano Letters
Issue number3
Publication statusPublished - 2015 Mar 11


  • ab initio calculations
  • anisotropic magnetoresistance
  • gate electric field
  • in-plane magnetic field
  • topological insulator


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