Electrochemical behavior of silicon (IV) Ion in BaF2-CaF2-SiO2 melts at 1573K

Yuejiao Hu; Xin Wang; Jiusan Xiao; Jungang Hou; Shuqiang Jiao; Hongmin Zhuz

doi:10.1149/2.038303jes

Electrochemical behavior of silicon (IV) Ion in BaF2-CaF2-SiO2 melts at 1573K

Yuejiao Hu, Xin Wang, Jiusan Xiao, Jungang Hou, Shuqiang Jiao, Hongmin Zhuz

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Studies were performed to investigate the cathodic behavior of silicon (IV) ion in a BaF₂-CaF₂-SiO₂ melt at a temperature of 1573 K. The results obtained show that the silicon (IV) ion was reduced through a single-step from Si₄₊ + 4e = Si, which was an irreversible process with diffusion-controlled mass transfer. The diffusion coefficient (D) for the reduction process of silicon (IV) ion in BaF₂-CaF ₂-SiO₂ melt was 9.76×10^-5 cm² s^-1, at 1573 K. Furthermore, galvanostatic electrolysis performed on a molybdenum electrode, which further presents the feasibility of electro-depositing silicon in molten BaF₂-CaF₂-SiO ₂ system.

Original language	English
Pages (from-to)	D81-D84
Journal	Journal of the Electrochemical Society
Volume	160
Issue number	3
DOIs	https://doi.org/10.1149/2.038303jes
Publication status	Published - 2013
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Electrochemical behavior of silicon (IV) Ion in BaF2-CaF2-SiO2 melts at 1573K",

abstract = "Studies were performed to investigate the cathodic behavior of silicon (IV) ion in a BaF2-CaF2-SiO2 melt at a temperature of 1573 K. The results obtained show that the silicon (IV) ion was reduced through a single-step from Si4+ + 4e = Si, which was an irreversible process with diffusion-controlled mass transfer. The diffusion coefficient (D) for the reduction process of silicon (IV) ion in BaF2-CaF 2-SiO2 melt was 9.76×10-5 cm2 s-1, at 1573 K. Furthermore, galvanostatic electrolysis performed on a molybdenum electrode, which further presents the feasibility of electro-depositing silicon in molten BaF2-CaF2-SiO 2 system.",

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T1 - Electrochemical behavior of silicon (IV) Ion in BaF2-CaF2-SiO2 melts at 1573K

AU - Hu, Yuejiao

AU - Wang, Xin

AU - Xiao, Jiusan

AU - Hou, Jungang

AU - Jiao, Shuqiang

AU - Zhuz, Hongmin

PY - 2013

Y1 - 2013

N2 - Studies were performed to investigate the cathodic behavior of silicon (IV) ion in a BaF2-CaF2-SiO2 melt at a temperature of 1573 K. The results obtained show that the silicon (IV) ion was reduced through a single-step from Si4+ + 4e = Si, which was an irreversible process with diffusion-controlled mass transfer. The diffusion coefficient (D) for the reduction process of silicon (IV) ion in BaF2-CaF 2-SiO2 melt was 9.76×10-5 cm2 s-1, at 1573 K. Furthermore, galvanostatic electrolysis performed on a molybdenum electrode, which further presents the feasibility of electro-depositing silicon in molten BaF2-CaF2-SiO 2 system.

AB - Studies were performed to investigate the cathodic behavior of silicon (IV) ion in a BaF2-CaF2-SiO2 melt at a temperature of 1573 K. The results obtained show that the silicon (IV) ion was reduced through a single-step from Si4+ + 4e = Si, which was an irreversible process with diffusion-controlled mass transfer. The diffusion coefficient (D) for the reduction process of silicon (IV) ion in BaF2-CaF 2-SiO2 melt was 9.76×10-5 cm2 s-1, at 1573 K. Furthermore, galvanostatic electrolysis performed on a molybdenum electrode, which further presents the feasibility of electro-depositing silicon in molten BaF2-CaF2-SiO 2 system.

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Electrochemical behavior of silicon (IV) Ion in BaF2-CaF2-SiO2 melts at 1573K

Abstract

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