TY - JOUR
T1 - Electroconductive π-junction Au nanoparticles
AU - Kanehara, Masayuki
AU - Takeya, Jun
AU - Uemura, Takafumi
AU - Murata, Hideyuki
AU - Takimiya, Kazuo
AU - Sekine, Hikaru
AU - Teranishi, Toshiharu
PY - 2012
Y1 - 2012
N2 - The fabrication of printed electronic circuits using solution-based electroconductive materials at low temperature is essential for the realization of modern printed electronics including transistors, photovoltaic cells, and light-emitting devices. Despite the progress in the field of semiconductor solution materials, reliable electrodes are always fabricated by a vacuum deposition process resulting in only partially solution-processed devices. In this paper, we show that planar phthalocyanine-conjugated Au nanoparticles (NPs) significantly improve the interparticle-carrier-transport properties. The deposition of a solution of the Au NPs under ambient conditions results in an electroconductive metallic thin film without further post-treatment. Maximum conductivity reaches >6600 S cm -1 and the conductivity remains unchanged for at least 1 year under ambient conditions. The all-solution- processed organic field-effect transistor (OFET) fabricated under ambient conditions exhibits mobility values as high as 2cm 2 V -1 s -1, the value of which is comparable to OFET devices having vacuum-deposited Au electrodes.
AB - The fabrication of printed electronic circuits using solution-based electroconductive materials at low temperature is essential for the realization of modern printed electronics including transistors, photovoltaic cells, and light-emitting devices. Despite the progress in the field of semiconductor solution materials, reliable electrodes are always fabricated by a vacuum deposition process resulting in only partially solution-processed devices. In this paper, we show that planar phthalocyanine-conjugated Au nanoparticles (NPs) significantly improve the interparticle-carrier-transport properties. The deposition of a solution of the Au NPs under ambient conditions results in an electroconductive metallic thin film without further post-treatment. Maximum conductivity reaches >6600 S cm -1 and the conductivity remains unchanged for at least 1 year under ambient conditions. The all-solution- processed organic field-effect transistor (OFET) fabricated under ambient conditions exhibits mobility values as high as 2cm 2 V -1 s -1, the value of which is comparable to OFET devices having vacuum-deposited Au electrodes.
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U2 - 10.1246/bcsj.20120103
DO - 10.1246/bcsj.20120103
M3 - Article
AN - SCOPUS:84866600815
SN - 0009-2673
VL - 85
SP - 957
EP - 961
JO - Bulletin of the Chemical Society of Japan
JF - Bulletin of the Chemical Society of Japan
IS - 9
ER -