Electrode properties of Pr0.7Sr0.3Fe 0.8Al0.2O3-δ thin film prepared by pulsed laser deposition

H. Takahashi; H. Takamura

doi:10.1149/1.3205827

Electrode properties of Pr_0.7Sr_0.3Fe _0.8Al_0.2O_3-δ thin film prepared by pulsed laser deposition

H. Takahashi, H. Takamura

ENG - Materials Science

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A mixed conductive Pr_0.7Sr_0.3Fe_0.8Al _0.2O_3-δ (PSFA) thin film was prepared by using pulsed laser deposition (PLD) and its electrochemical properties have been investigated. A dense PSFA target for PLD was prepared at 1130°C for 10 h. By using the target, 285 nm-thick PSFA thin film was deposited on an 8 mol%Y₂O₃-doped ZrO₂ substrate at 625°C The PSFA thin film was well crystallized and its grain size was in the range of 5 to 10 nm. The PSFA thin film showed an area specific resistance (ASR) of 0.37 Ω·cm² at 900°C The activation energy of ASR was approximately 1.6 eV at temperature range of 600 to 900°C

Original language	English
Title of host publication	ECS Transactions - Solid Oxide Fuel Cells 11 (SOFC-XI)
Pages	2675-2680
Number of pages	6
Edition	2 PART 3
DOIs	https://doi.org/10.1149/1.3205827
Publication status	Published - 2009
Event	11th International Symposium on Solid Oxide Fuel Cells (SOFC-XI)- 216th ECS Meeting - Vienna, Austria Duration: 2009 Oct 4 → 2009 Oct 9

Publication series

Name	ECS Transactions
Number	2 PART 3
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	11th International Symposium on Solid Oxide Fuel Cells (SOFC-XI)- 216th ECS Meeting
Country/Territory	Austria
City	Vienna
Period	09/10/4 → 09/10/9

Access to Document

10.1149/1.3205827

Cite this

@inproceedings{501a063a0afb45019db1a991a8768665,

title = "Electrode properties of Pr0.7Sr0.3Fe 0.8Al0.2O3-δ thin film prepared by pulsed laser deposition",

abstract = "A mixed conductive Pr0.7Sr0.3Fe0.8Al 0.2O3-δ (PSFA) thin film was prepared by using pulsed laser deposition (PLD) and its electrochemical properties have been investigated. A dense PSFA target for PLD was prepared at 1130°C for 10 h. By using the target, 285 nm-thick PSFA thin film was deposited on an 8 mol%Y2O3-doped ZrO2 substrate at 625°C The PSFA thin film was well crystallized and its grain size was in the range of 5 to 10 nm. The PSFA thin film showed an area specific resistance (ASR) of 0.37 Ω·cm2 at 900°C The activation energy of ASR was approximately 1.6 eV at temperature range of 600 to 900°C",

author = "H. Takahashi and H. Takamura",

year = "2009",

doi = "10.1149/1.3205827",

language = "English",

isbn = "9781566777391",

series = "ECS Transactions",

number = "2 PART 3",

pages = "2675--2680",

booktitle = "ECS Transactions - Solid Oxide Fuel Cells 11 (SOFC-XI)",

edition = "2 PART 3",

note = "11th International Symposium on Solid Oxide Fuel Cells (SOFC-XI)- 216th ECS Meeting ; Conference date: 04-10-2009 Through 09-10-2009",

}

Takahashi, H & Takamura, H 2009, Electrode properties of Pr_0.7Sr_0.3Fe _0.8Al_0.2O_3-δ thin film prepared by pulsed laser deposition. in ECS Transactions - Solid Oxide Fuel Cells 11 (SOFC-XI). 2 PART 3 edn, ECS Transactions, no. 2 PART 3, vol. 25, pp. 2675-2680, 11th International Symposium on Solid Oxide Fuel Cells (SOFC-XI)- 216th ECS Meeting, Vienna, Austria, 09/10/4. https://doi.org/10.1149/1.3205827

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T1 - Electrode properties of Pr0.7Sr0.3Fe 0.8Al0.2O3-δ thin film prepared by pulsed laser deposition

AU - Takahashi, H.

AU - Takamura, H.

PY - 2009

Y1 - 2009

N2 - A mixed conductive Pr0.7Sr0.3Fe0.8Al 0.2O3-δ (PSFA) thin film was prepared by using pulsed laser deposition (PLD) and its electrochemical properties have been investigated. A dense PSFA target for PLD was prepared at 1130°C for 10 h. By using the target, 285 nm-thick PSFA thin film was deposited on an 8 mol%Y2O3-doped ZrO2 substrate at 625°C The PSFA thin film was well crystallized and its grain size was in the range of 5 to 10 nm. The PSFA thin film showed an area specific resistance (ASR) of 0.37 Ω·cm2 at 900°C The activation energy of ASR was approximately 1.6 eV at temperature range of 600 to 900°C

AB - A mixed conductive Pr0.7Sr0.3Fe0.8Al 0.2O3-δ (PSFA) thin film was prepared by using pulsed laser deposition (PLD) and its electrochemical properties have been investigated. A dense PSFA target for PLD was prepared at 1130°C for 10 h. By using the target, 285 nm-thick PSFA thin film was deposited on an 8 mol%Y2O3-doped ZrO2 substrate at 625°C The PSFA thin film was well crystallized and its grain size was in the range of 5 to 10 nm. The PSFA thin film showed an area specific resistance (ASR) of 0.37 Ω·cm2 at 900°C The activation energy of ASR was approximately 1.6 eV at temperature range of 600 to 900°C

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