Electroless Cu seed on Ru and Co liners in high aspect ratio TSV

F. Inoue; H. Philipsen; M. H. Van Der Veen; S. Van Huylenbroeck; S. Armini; H. Struyf; T. Tanaka

doi:10.1109/IITC.2014.6831871

Electroless Cu seed on Ru and Co liners in high aspect ratio TSV

F. Inoue, H. Philipsen, M. H. Van Der Veen, S. Van Huylenbroeck, S. Armini, H. Struyf, T. Tanaka

MEN - Biomedical Engineering

Interuniversitair Micro-Elektronica Centrum

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

High aspect ratio through-silicon vias (3 μm diameter by 50 μm depth) have been filled by standard Cu plating process on electroless deposited (ELD) Cu seed layers on conformal liners of Ru or Co. The in-field Cu overburden that was needed to achieve electrochemical fill on the ELD-Cu seed was 600 nm. This is much lower than would have been needed in a conventional scheme with a PVD-Cu seed (of ∼ 1500 nm) and, with that, reduces the Cu CMP time. This work shows the feasibility of Cu electroless as deposition technique in a TSV metallization process.

Original language	English
Title of host publication	2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014
Publisher	IEEE Computer Society
Pages	207-210
Number of pages	4
ISBN (Print)	9781479950164
DOIs	https://doi.org/10.1109/IITC.2014.6831871
Publication status	Published - 2014
Event	2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014 - San Jose, CA, United States Duration: 2014 May 20 → 2014 May 23

Publication series

Name	2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014

Conference

Conference	2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014
Country/Territory	United States
City	San Jose, CA
Period	14/5/20 → 14/5/23

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10.1109/IITC.2014.6831871

Cite this

Inoue, F., Philipsen, H., Van Der Veen, M. H., Van Huylenbroeck, S., Armini, S., Struyf, H., & Tanaka, T. (2014). Electroless Cu seed on Ru and Co liners in high aspect ratio TSV. In 2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014 (pp. 207-210). Article 6831871 (2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014). IEEE Computer Society. https://doi.org/10.1109/IITC.2014.6831871

Inoue, F. ; Philipsen, H. ; Van Der Veen, M. H. et al. / Electroless Cu seed on Ru and Co liners in high aspect ratio TSV. 2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014. IEEE Computer Society, 2014. pp. 207-210 (2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014).

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title = "Electroless Cu seed on Ru and Co liners in high aspect ratio TSV",

abstract = "High aspect ratio through-silicon vias (3 μm diameter by 50 μm depth) have been filled by standard Cu plating process on electroless deposited (ELD) Cu seed layers on conformal liners of Ru or Co. The in-field Cu overburden that was needed to achieve electrochemical fill on the ELD-Cu seed was 600 nm. This is much lower than would have been needed in a conventional scheme with a PVD-Cu seed (of ∼ 1500 nm) and, with that, reduces the Cu CMP time. This work shows the feasibility of Cu electroless as deposition technique in a TSV metallization process.",

author = "F. Inoue and H. Philipsen and {Van Der Veen}, {M. H.} and {Van Huylenbroeck}, S. and S. Armini and H. Struyf and T. Tanaka",

year = "2014",

doi = "10.1109/IITC.2014.6831871",

language = "English",

isbn = "9781479950164",

series = "2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014",

publisher = "IEEE Computer Society",

pages = "207--210",

booktitle = "2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014",

address = "United States",

note = "2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014 ; Conference date: 20-05-2014 Through 23-05-2014",

}

Inoue, F, Philipsen, H, Van Der Veen, MH, Van Huylenbroeck, S, Armini, S, Struyf, H & Tanaka, T 2014, Electroless Cu seed on Ru and Co liners in high aspect ratio TSV. in 2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014., 6831871, 2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014, IEEE Computer Society, pp. 207-210, 2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014, San Jose, CA, United States, 14/5/20. https://doi.org/10.1109/IITC.2014.6831871

Electroless Cu seed on Ru and Co liners in high aspect ratio TSV. / Inoue, F.; Philipsen, H.; Van Der Veen, M. H. et al.
2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014. IEEE Computer Society, 2014. p. 207-210 6831871 (2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electroless Cu seed on Ru and Co liners in high aspect ratio TSV

AU - Inoue, F.

AU - Philipsen, H.

AU - Van Der Veen, M. H.

AU - Van Huylenbroeck, S.

AU - Armini, S.

AU - Struyf, H.

AU - Tanaka, T.

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N2 - High aspect ratio through-silicon vias (3 μm diameter by 50 μm depth) have been filled by standard Cu plating process on electroless deposited (ELD) Cu seed layers on conformal liners of Ru or Co. The in-field Cu overburden that was needed to achieve electrochemical fill on the ELD-Cu seed was 600 nm. This is much lower than would have been needed in a conventional scheme with a PVD-Cu seed (of ∼ 1500 nm) and, with that, reduces the Cu CMP time. This work shows the feasibility of Cu electroless as deposition technique in a TSV metallization process.

AB - High aspect ratio through-silicon vias (3 μm diameter by 50 μm depth) have been filled by standard Cu plating process on electroless deposited (ELD) Cu seed layers on conformal liners of Ru or Co. The in-field Cu overburden that was needed to achieve electrochemical fill on the ELD-Cu seed was 600 nm. This is much lower than would have been needed in a conventional scheme with a PVD-Cu seed (of ∼ 1500 nm) and, with that, reduces the Cu CMP time. This work shows the feasibility of Cu electroless as deposition technique in a TSV metallization process.

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BT - 2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014

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Inoue F, Philipsen H, Van Der Veen MH, Van Huylenbroeck S, Armini S, Struyf H et al. Electroless Cu seed on Ru and Co liners in high aspect ratio TSV. In 2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014. IEEE Computer Society. 2014. p. 207-210. 6831871. (2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014). doi: 10.1109/IITC.2014.6831871

Electroless Cu seed on Ru and Co liners in high aspect ratio TSV

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