Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors

Naoteru Shigekawa, Kenji Shiojima, Tetsuya Suemitsu

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Spectral analysis of the electroluminesence (EL) of AlGaN/GaN high-electron-mobility transistors is reported. The shape of the EL spectra is completely different from the shape of the photoluminescence spectrum. The wavelength for the peak of the EL spectrum gets shorter when the gate-bias voltage is decreased. Its intensity shows a bell shape when the gate-bias voltage is swept. These features suggest that the EL signal is due to the intraband transition of the channel electrons in the high-field region at the drain edge.

Original languageEnglish
Pages (from-to)1196-1198
Number of pages3
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2001 Aug 20


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