@inproceedings{60557e4254e34937b5ceb18193bb23ff,
title = "Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature",
abstract = "Electroluminescence from erbium-doped nanoscale pn diodes was achieved. Decreasing the number of erbium ions in scaling light-emitting silicon devices decreases the emission intensity. This trend opens new possibility of single-photon emission-key function of quantum communication. Furthermore, doping by ion implantation takes advantage of controlling the number and position of erbium ions in the device. According to this trend, we fabricated pn-diodes with dimensions of telecom wavelength and observed the electroluminescence from the erbium doped region at the forward bias of 1.2 V. We discuss the photoemissivity and the current-voltage characteristics of the device, toward the single-photon emission.",
keywords = "electroluminescence, erbium, nanoscale pn diode",
author = "Takafumi Fujimoto and Keinan Gi and Stefano Bigoni and Michele Celebrano and Marco Finazzi and Giorgio Ferrari and Takahiro Shinada and Enrico Prati and Takashi Tanii",
note = "Funding Information: ACKNOWLEDGMENTS This work was supported by JSPS KAKENHI (18H03766, 17H0251), and partly by the Waseda University Grant for Special Research Projects (2018K-214) and QUASIX Grant from Italian Space Agency. Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 ; Conference date: 13-06-2020 Through 14-06-2020",
year = "2020",
month = jun,
doi = "10.1109/SNW50361.2020.9131655",
language = "English",
series = "2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "123--124",
booktitle = "2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020",
address = "United States",
}