TY - GEN
T1 - Electrolyte Based Thermal to Electric Energy Conversion Utilising 10 nm Diameter AL2O3 Nanochannels
AU - Van Toan, Nguyen
AU - Hasnan, Megat Muhammad Ikhsan Megat
AU - Udagawa, Daiki
AU - Inomata, Naoki
AU - Toda, Masaya
AU - Said, Suhana Mohd
AU - Sabri, Mohd Faizul Mohd
AU - Ono, Takahito
N1 - Funding Information:
Part of this work was performed in the Micro/Nanomachining Research Education Center (MNC) of Tohoku University, Sendai, Japan. This work was supported in part by JSPS KAKENHI for Young Scientists B (Grant number: 17K14095), and also supported in part by Council for Science, Technology and Innovation(CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP).
Funding Information:
Part of this work was performed in the Micro/Nanomachining Research Education Center (MNC) of Tohoku University, Sendai, Japan.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/1
Y1 - 2019/1
N2 - This work reports the thermal to electric energy conversion based on fluidic transport in nanochannels inducted by temperature gradient. Anodized aluminum oxide (AAO) nanochannels with 10 nm-diameter and 3\ \mu \mathrm{m}-length are successfully fabricated by anodic oxidation process in a diluted acid electrolytic solution. Thermal to electric energy conversion using above AAO nanochannels has been demonstrated. Maximum power output of the fabricated device is found at 12.2 nW with the load resistance of 47\ \mathrm{k}\Omega and temperature gradient of 17°C. The fabricated device can generate the power density of 255\ \mu \mathrm{W}/\text{cm}^{2} with temperature gradient of 30°C.
AB - This work reports the thermal to electric energy conversion based on fluidic transport in nanochannels inducted by temperature gradient. Anodized aluminum oxide (AAO) nanochannels with 10 nm-diameter and 3\ \mu \mathrm{m}-length are successfully fabricated by anodic oxidation process in a diluted acid electrolytic solution. Thermal to electric energy conversion using above AAO nanochannels has been demonstrated. Maximum power output of the fabricated device is found at 12.2 nW with the load resistance of 47\ \mathrm{k}\Omega and temperature gradient of 17°C. The fabricated device can generate the power density of 255\ \mu \mathrm{W}/\text{cm}^{2} with temperature gradient of 30°C.
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U2 - 10.1109/MEMSYS.2019.8870755
DO - 10.1109/MEMSYS.2019.8870755
M3 - Conference contribution
AN - SCOPUS:85074340126
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 507
EP - 510
BT - 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019
Y2 - 27 January 2019 through 31 January 2019
ER -