Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

Yoshitaka Niida; Kei Takashina; Yukinori Ono; Akira Fujiwara; Yoshiro Hirayama

doi:10.1063/1.4803014

Electron and hole mobilities at a Si/SiO₂ interface with giant valley splitting

Yoshitaka Niida, Kei Takashina, Yukinori Ono, Akira Fujiwara, Yoshiro Hirayama

SCI - Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO₂) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO₂ interface.

Original language	English
Article number	191603
Journal	Applied Physics Letters
Volume	102
Issue number	19
DOIs	https://doi.org/10.1063/1.4803014
Publication status	Published - 2013 May 13

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4803014

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title = "Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting",

abstract = "We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.",

author = "Yoshitaka Niida and Kei Takashina and Yukinori Ono and Akira Fujiwara and Yoshiro Hirayama",

note = "Funding Information: Y.N. was supported by JSPS Research Fellowships for Young Scientists and K.T. was supported by the EPSRC of the UK.",

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T1 - Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

AU - Niida, Yoshitaka

AU - Takashina, Kei

AU - Ono, Yukinori

AU - Fujiwara, Akira

AU - Hirayama, Yoshiro

N1 - Funding Information: Y.N. was supported by JSPS Research Fellowships for Young Scientists and K.T. was supported by the EPSRC of the UK.

PY - 2013/5/13

Y1 - 2013/5/13

N2 - We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.

AB - We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.

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ER -

Electron and hole mobilities at a Si/SiO₂ interface with giant valley splitting

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