Electron and hole proximity effects in the InAs/AlSb/GaSb system

Jöran H. Roslund, Ken Saito, Kyoichi Suzuki, Hiroshi Yamaguchi, Yoshiro Hirayama

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We have investigated the properties of InAs/AlSb/GaSb electron-hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.

Original languageEnglish
Pages (from-to)2448-2451
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - 2000


  • Coupled quantum wells
  • Cyclotron resonance
  • Electrical characterization
  • InAs/AlSb
  • InAs/GaSb

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