@inproceedings{5d4bb11251494a8f8763e696e5c7c308,
title = "Electron-beam-induced current study of breakdown behavior of high-K gate MOSFETs",
abstract = "We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k gate dielectric by using electron-beam induced current (EBIC) technique. The correlation between time-dependent dielectric breakdown (TDDB) characteristics and EBIC imaging of breakdown sites are found. A systematic study was performed on pre-existing and electrical stress induced defects. Stress-induced defects are related to the formation of electron trapping defects. The origin of pre-existing defects is also discussed in terms of oxygen vacancy model with comparing different gate electrodes.",
keywords = "Ebic, High-k gate dielectrics",
author = "Jun Chen and Takashi Sekiguchi and Masami Takase and Naoki Fukata and Ryu Hasunuma and Kikuo Yamabe and Motoyuki Sato and Keisaku Yamada and Toyohiro Chikyo",
year = "2009",
doi = "10.4028/www.scientific.net/SSP.156-158.461",
language = "English",
isbn = "3908451744",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "461--466",
booktitle = "Gettering and Defect Engineering in Semiconductor Technology XIII",
note = "13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009 ; Conference date: 26-09-2009 Through 02-10-2009",
}