Electron beam lithography of free-standing Ni-Mn-Ga films

Mario Schmitt, M. Ohtsuka, M. Kohl

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We present a process to fabricate freely movable shape memory alloy (SMA) structures by electron-beam lithography (EBL) and sacrificial layer technology starting from free-standing SMA films. Functional films such as SMA and ferromagnetic SMA films may not be structured on the same substrate used for deposition due to process incompatibilities. In addition, EBL and sacrificial layer technologies entail various constraints and requirements on substrate material and properties. These issues can be solved by introducing a substrate inversion technology that includes deposition of sacrificial structures followed by electroplating of a new metal substrate onto the functional film and release of the initial substrate. This process is demonstrated for a SMA film of Ni- Mn-Ga that has been sputter-deposited on a polymer substrate allowing the fabrication of large arrays of mechanically active SMA nanostructures.

Original languageEnglish
Pages (from-to)174-181
Number of pages8
JournalPhysics Procedia
Publication statusPublished - 2010


  • Electron beam lithography
  • Ferromagnetic shape memory alloys
  • Ni-Mn-Ga thin films
  • Sacrificial layer technology


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