Electron counting of single-electron tunneling current

T. Fujisawa; T. Hayashi; Y. Hirayama; H. D. Cheong; Y. H. Jeong

doi:10.1063/1.1691491

Electron counting of single-electron tunneling current

T. Fujisawa, T. Hayashi, Y. Hirayama, H. D. Cheong, Y. H. Jeong

Center for Science and Innovation in Spintronics (CSIS)

Research output: Contribution to journal › Article › peer-review

114 Citations (Scopus)

Abstract

A radio-frequency single-electron transistor (RF-SET), was used for the detection of single-electron tunneling through a quantum dot. Two electrically isolated SETs were integrated in an AlGaAs/GaAs heterostructure. Single-electron tunneling events were observed in both frequency and time domains. The results show that the accuracy of electron counting can be improved by increasing the coupling coefficient and decreasing the background noise in the measurement system.

Original language	English
Pages (from-to)	2343-2345
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	13
DOIs	https://doi.org/10.1063/1.1691491
Publication status	Published - 2004 Mar 29

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AU - Hayashi, T.

AU - Hirayama, Y.

AU - Cheong, H. D.

AU - Jeong, Y. H.

PY - 2004/3/29

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AB - A radio-frequency single-electron transistor (RF-SET), was used for the detection of single-electron tunneling through a quantum dot. Two electrically isolated SETs were integrated in an AlGaAs/GaAs heterostructure. Single-electron tunneling events were observed in both frequency and time domains. The results show that the accuracy of electron counting can be improved by increasing the coupling coefficient and decreasing the background noise in the measurement system.

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Electron counting of single-electron tunneling current

Abstract

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