TY - GEN
T1 - Electron emission mechanism of diamond characterized using combined XPS/UPS/FES
AU - Yamaguchi, Hisato
AU - Yamada, Takatoshi
AU - Pate, Bradford B.
AU - Kudo, Masato
AU - Takakuwa, Yuji
AU - Okano, Ken
PY - 2006
Y1 - 2006
N2 - Diamond has various advantages as an electron emitter in addition to the low-threshold voltage, negative electron affinity (NEA), high thermal conductivity, high mechanical hardness, and high chemical stability. The difficulty in clarification of electron emission mechanism is preventing diamond from being used in the practical use. It is extremely difficult to identify the surface potential of the emitting diamond from conventional Emission current (I)- Anode voltage (V) characteristics. If one could measure the potential of the emitting surface, the band diagram of emitting diamond can be completed. The combined spectroscopy of XPS/UPS/FES specially built for this study, is one of the most powerful tool, which could identify the potential of the emitting surface. In this study, we have succeeded in observing the origin of field-emitted electrons using our combined XPS/UPS/FES system.
AB - Diamond has various advantages as an electron emitter in addition to the low-threshold voltage, negative electron affinity (NEA), high thermal conductivity, high mechanical hardness, and high chemical stability. The difficulty in clarification of electron emission mechanism is preventing diamond from being used in the practical use. It is extremely difficult to identify the surface potential of the emitting diamond from conventional Emission current (I)- Anode voltage (V) characteristics. If one could measure the potential of the emitting surface, the band diagram of emitting diamond can be completed. The combined spectroscopy of XPS/UPS/FES specially built for this study, is one of the most powerful tool, which could identify the potential of the emitting surface. In this study, we have succeeded in observing the origin of field-emitted electrons using our combined XPS/UPS/FES system.
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M3 - Conference contribution
AN - SCOPUS:33747356272
SN - 1558998454
SN - 9781558998452
T3 - Materials Research Society Symposium Proceedings
SP - 279
EP - 284
BT - Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
T2 - 2005 MRS Fall Meeting
Y2 - 28 November 2005 through 2 December 2005
ER -