Electron emission mechanism of doped CVD diamond characterized using combined XPS/UPS/FES system

Hisato Yamaguchi, Ichitaro Saito, Yuki Kudo, Tomoaki Masuzawa, Takatoshi Yamada, Masato Kudo, Yuji Takakuwa, Kem Okano

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Electric field of less than 5 V/μm is enough to extract electrons from diamond, whereas field of one to two orders of magnitude higher is needed to extract electrons from metal emitter tips. Despite such low-threshold field, the difficulty in clarification of electron emission mechanism is the factor preventing diamond from being used in a practical application. Quite a few numbers of possible mechanisms were proposed to better understand the origin and properties of the observed emission. Most of these mechanisms, however, were based on the conventional I-V (Emission current-Anode voltage) characteristics. Energy distribution of the field-emitted electrons is essential in direct clarification of the mechanism, In this study, combined XPS/UPS/FES system was used to characterize the electron emission mechanism of doped chemical vapor deposited (CVD) diamond. The results indicated successful observation of the origin of field-emitted electrons from doped CVD diamond comparison with natural diamond, used as a reference.

Original languageEnglish
Title of host publicationDiamond Electronics-Fundamentals to Applications
Pages215-220
Number of pages6
Publication statusPublished - 2007
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume956
ISSN (Print)0272-9172

Conference

Conference2006 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period06/11/2706/12/1

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