TY - JOUR
T1 - Electron-energy-loss spectroscopy study of a stable decagonal quasicrystal Al70Ni20Rh10
AU - Terauchi, Masami
AU - Ueda, Hiroshi
AU - Tanaka, Michiyoshi
AU - Tsai, An Pang
AU - Inoue, Akihisa
AU - Masumoto, Tsuyoshi
N1 - Funding Information:
The authors thank Mr F. Sat0 for his skilful technical assistance. The present work was partly supported by a grant-in-aid from the Ministry of Education, Science and Culture, Japan.
PY - 1998/6
Y1 - 1998/6
N2 - Electron-energy-loss spectra of a stable decagonal quasicrystal Al70Ni20Rh10 have been obtained at electron incidences parallel and perpendicular to the decagonal axis on single-crystal areas of 180 nni diameter. Volume plasmon peaks appeared at about 17 eV for both incidences but showed full width at half-maximum values of 7.0 eV for the parallel incidence and 6.3 eV for the perpendicular incidence. Excitation spectra of Al L-shell electrons for both of the incidences showed a sharp onset (Fermi edge) at an energy higher by 0.1 eV than that of aluminium. The spectra showed a small rise in intensity at the onset. This small rise corresponds to a low density of states near the Ferrni level, showing the presence of a pseudogap. The origins of the high electrical resistivity and of the bonding nature of the quasicrystal are discussed.
AB - Electron-energy-loss spectra of a stable decagonal quasicrystal Al70Ni20Rh10 have been obtained at electron incidences parallel and perpendicular to the decagonal axis on single-crystal areas of 180 nni diameter. Volume plasmon peaks appeared at about 17 eV for both incidences but showed full width at half-maximum values of 7.0 eV for the parallel incidence and 6.3 eV for the perpendicular incidence. Excitation spectra of Al L-shell electrons for both of the incidences showed a sharp onset (Fermi edge) at an energy higher by 0.1 eV than that of aluminium. The spectra showed a small rise in intensity at the onset. This small rise corresponds to a low density of states near the Ferrni level, showing the presence of a pseudogap. The origins of the high electrical resistivity and of the bonding nature of the quasicrystal are discussed.
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U2 - 10.1080/13642819808206409
DO - 10.1080/13642819808206409
M3 - Article
AN - SCOPUS:0032097080
SN - 1364-2812
VL - 77
SP - 1625
EP - 1632
JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
IS - 6
ER -