Electron g-factor and spin decoherence in GaAs quantum nanodisks fabricated by fully top-down lithography

Toru Tanaka; Takayuki Kiba; Akio Higo; Cedric Thomas; Yosuke Tamura; Seiji Samukawa; Akihiro Murayama

doi:10.1016/j.jcrysgro.2015.02.066

Electron g-factor and spin decoherence in GaAs quantum nanodisks fabricated by fully top-down lithography

Toru Tanaka, Takayuki Kiba, Akio Higo, Cedric Thomas, Yosuke Tamura, Seiji Samukawa, Akihiro Murayama

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

GaAs nanodisks (NDs), with a thickness of 8 nm and a diameter of 15 nm, were directly fabricated from GaAs quantum wells (QW) by damage-free neutral-beam etching using bio-nanotemplates. We observed the electron g-factor and spin dephasing in NDs with different barrier heights in the lateral direction by means of time-resolved Kerr rotation. The magnitude of the g-factor depends on the degree of lateral confinement originating from enhanced penetration of the electron wavefunction from an ND into the surrounding AlGaAs barriers. The spin-dephasing time is also observed to be altered by ND formation.

Original language	English
Pages (from-to)	295-298
Number of pages	4
Journal	Journal of Crystal Growth
Volume	425
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.066
Publication status	Published - 2015 Jul 28

Keywords

A1: Nanostructures
B1: Nanomaterials
B2.Semiconducting gallium arsenide

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2015.02.066

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title = "Electron g-factor and spin decoherence in GaAs quantum nanodisks fabricated by fully top-down lithography",

abstract = "GaAs nanodisks (NDs), with a thickness of 8 nm and a diameter of 15 nm, were directly fabricated from GaAs quantum wells (QW) by damage-free neutral-beam etching using bio-nanotemplates. We observed the electron g-factor and spin dephasing in NDs with different barrier heights in the lateral direction by means of time-resolved Kerr rotation. The magnitude of the g-factor depends on the degree of lateral confinement originating from enhanced penetration of the electron wavefunction from an ND into the surrounding AlGaAs barriers. The spin-dephasing time is also observed to be altered by ND formation.",

keywords = "A1: Nanostructures, B1: Nanomaterials, B2.Semiconducting gallium arsenide",

author = "Toru Tanaka and Takayuki Kiba and Akio Higo and Cedric Thomas and Yosuke Tamura and Seiji Samukawa and Akihiro Murayama",

note = "Funding Information: This work is supported in part by the Japan Society for the Promotion of Science (JSPS), Grant-in-Aid for Scientific Research (S) No. 22221007 . Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "2015",

month = jul,

day = "28",

doi = "10.1016/j.jcrysgro.2015.02.066",

language = "English",

volume = "425",

pages = "295--298",

journal = "Journal of Crystal Growth",

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T1 - Electron g-factor and spin decoherence in GaAs quantum nanodisks fabricated by fully top-down lithography

AU - Tanaka, Toru

AU - Kiba, Takayuki

AU - Higo, Akio

AU - Thomas, Cedric

AU - Tamura, Yosuke

AU - Samukawa, Seiji

AU - Murayama, Akihiro

N1 - Funding Information: This work is supported in part by the Japan Society for the Promotion of Science (JSPS), Grant-in-Aid for Scientific Research (S) No. 22221007 . Publisher Copyright: © 2015 Elsevier B.V. All rights reserved. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2015/7/28

Y1 - 2015/7/28

N2 - GaAs nanodisks (NDs), with a thickness of 8 nm and a diameter of 15 nm, were directly fabricated from GaAs quantum wells (QW) by damage-free neutral-beam etching using bio-nanotemplates. We observed the electron g-factor and spin dephasing in NDs with different barrier heights in the lateral direction by means of time-resolved Kerr rotation. The magnitude of the g-factor depends on the degree of lateral confinement originating from enhanced penetration of the electron wavefunction from an ND into the surrounding AlGaAs barriers. The spin-dephasing time is also observed to be altered by ND formation.

AB - GaAs nanodisks (NDs), with a thickness of 8 nm and a diameter of 15 nm, were directly fabricated from GaAs quantum wells (QW) by damage-free neutral-beam etching using bio-nanotemplates. We observed the electron g-factor and spin dephasing in NDs with different barrier heights in the lateral direction by means of time-resolved Kerr rotation. The magnitude of the g-factor depends on the degree of lateral confinement originating from enhanced penetration of the electron wavefunction from an ND into the surrounding AlGaAs barriers. The spin-dephasing time is also observed to be altered by ND formation.

KW - A1: Nanostructures

KW - B1: Nanomaterials

KW - B2.Semiconducting gallium arsenide

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DO - 10.1016/j.jcrysgro.2015.02.066

M3 - Article

AN - SCOPUS:84979958593

SN - 0022-0248

VL - 425

SP - 295

EP - 298

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Electron g-factor and spin decoherence in GaAs quantum nanodisks fabricated by fully top-down lithography

Abstract

Keywords

ASJC Scopus subject areas

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