Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling

Jung Ho Yoo; Jun Mo Yang; Shaislamov Ulugbek; Chi Won Ahn; Wook Jung Hwang; Joong Keun Park; Chul Min Park; Seung Bum Hong; Joong Jung Kim; Daisuke Shindo

doi:10.1093/jmicro/dfm037

Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling

Jung Ho Yoo, Jun Mo Yang, Shaislamov Ulugbek, Chi Won Ahn, Wook Jung Hwang, Joong Keun Park, Chul Min Park, Seung Bum Hong, Joong Jung Kim, Daisuke Shindo

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The visualization of two-dimensional dopant profiles and the quantitative analysis of the built-in potential across the p-n junction, ΔV _p-n, by electron holography were carried out with specimens prepared from the backside ion milling method combined with the focused ion beam technique. It was possible to obtain dopant profiling of the large field of view with low surface damage and gradually changed thickness. From the quantitative analysis using the phase information of electron holography and the thickness information of electron energy-loss spectroscopy, ΔV_p-n was estimated to be about 0.78 V assuming that the thickness of the dead layer on both surfaces is 50 nm, which is to show the difference of within 12% from the calculated value. It demonstrates that the backside ion milling method is a very promising specimen preparation technique for the reliable and quantitative analysis of dopant profiling with electron holography.

Original language	English
Pages (from-to)	13-18
Number of pages	6
Journal	Journal of Electron Microscopy
Volume	57
Issue number	1
DOIs	https://doi.org/10.1093/jmicro/dfm037
Publication status	Published - 2008 Jan
Externally published	Yes

Keywords

Backside ion milling
Electron energy-loss spectroscopy
Electron holography
Focused ion beam
P-n junction
Quantitative analysis of 2D dopant profile

ASJC Scopus subject areas

Instrumentation

Access to Document

10.1093/jmicro/dfm037

Cite this

@article{8ea80f76b9bb49029d67400da0be082c,

title = "Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling",

abstract = "The visualization of two-dimensional dopant profiles and the quantitative analysis of the built-in potential across the p-n junction, ΔV p-n, by electron holography were carried out with specimens prepared from the backside ion milling method combined with the focused ion beam technique. It was possible to obtain dopant profiling of the large field of view with low surface damage and gradually changed thickness. From the quantitative analysis using the phase information of electron holography and the thickness information of electron energy-loss spectroscopy, ΔVp-n was estimated to be about 0.78 V assuming that the thickness of the dead layer on both surfaces is 50 nm, which is to show the difference of within 12% from the calculated value. It demonstrates that the backside ion milling method is a very promising specimen preparation technique for the reliable and quantitative analysis of dopant profiling with electron holography.",

keywords = "Backside ion milling, Electron energy-loss spectroscopy, Electron holography, Focused ion beam, P-n junction, Quantitative analysis of 2D dopant profile",

author = "Yoo, {Jung Ho} and Yang, {Jun Mo} and Shaislamov Ulugbek and Ahn, {Chi Won} and Hwang, {Wook Jung} and Park, {Joong Keun} and Park, {Chul Min} and Hong, {Seung Bum} and Kim, {Joong Jung} and Daisuke Shindo",

note = "Funding Information: This research was supported by a grant (code 05K1501-01210) from the {\textquoteleft}Center for Nanostructure Materials Technology{\textquoteright} under {\textquoteleft}21st Century Frontier R&D Programs{\textquoteright} of the Ministry of Science and Technology, Korea.",

year = "2008",

month = jan,

doi = "10.1093/jmicro/dfm037",

language = "English",

volume = "57",

pages = "13--18",

journal = "Microscopy (Oxford, England)",

issn = "2050-5698",

publisher = "Japanese Society of Microscopy",

number = "1",

}

TY - JOUR

T1 - Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling

AU - Yoo, Jung Ho

AU - Yang, Jun Mo

AU - Ulugbek, Shaislamov

AU - Ahn, Chi Won

AU - Hwang, Wook Jung

AU - Park, Joong Keun

AU - Park, Chul Min

AU - Hong, Seung Bum

AU - Kim, Joong Jung

AU - Shindo, Daisuke

N1 - Funding Information: This research was supported by a grant (code 05K1501-01210) from the ‘Center for Nanostructure Materials Technology’ under ‘21st Century Frontier R&D Programs’ of the Ministry of Science and Technology, Korea.

PY - 2008/1

Y1 - 2008/1

N2 - The visualization of two-dimensional dopant profiles and the quantitative analysis of the built-in potential across the p-n junction, ΔV p-n, by electron holography were carried out with specimens prepared from the backside ion milling method combined with the focused ion beam technique. It was possible to obtain dopant profiling of the large field of view with low surface damage and gradually changed thickness. From the quantitative analysis using the phase information of electron holography and the thickness information of electron energy-loss spectroscopy, ΔVp-n was estimated to be about 0.78 V assuming that the thickness of the dead layer on both surfaces is 50 nm, which is to show the difference of within 12% from the calculated value. It demonstrates that the backside ion milling method is a very promising specimen preparation technique for the reliable and quantitative analysis of dopant profiling with electron holography.

AB - The visualization of two-dimensional dopant profiles and the quantitative analysis of the built-in potential across the p-n junction, ΔV p-n, by electron holography were carried out with specimens prepared from the backside ion milling method combined with the focused ion beam technique. It was possible to obtain dopant profiling of the large field of view with low surface damage and gradually changed thickness. From the quantitative analysis using the phase information of electron holography and the thickness information of electron energy-loss spectroscopy, ΔVp-n was estimated to be about 0.78 V assuming that the thickness of the dead layer on both surfaces is 50 nm, which is to show the difference of within 12% from the calculated value. It demonstrates that the backside ion milling method is a very promising specimen preparation technique for the reliable and quantitative analysis of dopant profiling with electron holography.

KW - Backside ion milling

KW - Electron energy-loss spectroscopy

KW - Electron holography

KW - Focused ion beam

KW - P-n junction

KW - Quantitative analysis of 2D dopant profile

UR - http://www.scopus.com/inward/record.url?scp=38849205467&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38849205467&partnerID=8YFLogxK

U2 - 10.1093/jmicro/dfm037

DO - 10.1093/jmicro/dfm037

M3 - Article

C2 - 18175780

AN - SCOPUS:38849205467

SN - 2050-5698

VL - 57

SP - 13

EP - 18

JO - Microscopy (Oxford, England)

JF - Microscopy (Oxford, England)

IS - 1

ER -

Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this