Abstract
Electron-irradiation-induced disordering in CuPt-ordered GaInP has been examined by in-situ photoluminescence and cathodoluminescence spectroscopy in a transmission electron microscope. A decrease of luminescence intensity by an electron-irradiation in the energy range above 120 keV has been observed, and we have shown that the decrease is due to the Frenkel-type defects on the Ga and In sublattices generated by electron-irradiation. We have proposed that an electron-irradiation-induced migration of the Ga- and In-vacancies dominates the disordering in the dose range below 2×1020 cm2.
| Original language | English |
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| Pages | 173-176 |
| Number of pages | 4 |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA Duration: 1998 Jun 1 → 1998 Jun 5 |
Conference
| Conference | Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) |
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| City | Berkeley, CA, USA |
| Period | 98/6/1 → 98/6/5 |