Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

Y. X. Liu; E. Sugimata; M. Masahara; Kazuhiko Endo; K. Ishii; T. Matsukawa; H. Takashima; H. Yamauchi; E. Suzuki

doi:10.1016/j.mee.2005.04.014

Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

Y. X. Liu, E. Sugimata, M. Masahara, Kazuhiko Endo, K. Ishii, T. Matsukawa, H. Takashima, H. Yamauchi, E. Suzuki

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

This paper presents, for the first time, the experimental electron mobility in FinFETs with a (111) channel surface fabricated by the orientation-dependent wet etching. The maximum electron mobility (u _eff) is around 300-cm ² /V-s, which is close to that in the (111) bulk MOSFETs. Moreover, the value of u _eff is comparable or better than the reported ones in the usual FinFETs with a (110) channel surface prepared with careful surface treatments. This result indicates that the quality and channel surface roughness of the Si-fins by the orientation-dependent wet etching are much better than those fabricated by the conventional reactive ion etching (RIE) process.

Original language	English
Pages (from-to)	390-393
Number of pages	4
Journal	Microelectronic Engineering
Volume	80
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/j.mee.2005.04.014
Publication status	Published - 2005 Jun 17
Externally published	Yes
Event	14th Biennial Conference on Insulating Films on Semiconductors - Duration: 2005 Jun 22 → 2005 Jun 24

Keywords

Double-gate MOSFET
FinFET
Mobility
Orientation-dependent wet etching
Rectangular cross-section Si-fin

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2005.04.014

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@article{5e241984b7db495cb8c9d4d582b059da,

title = "Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching",

abstract = "This paper presents, for the first time, the experimental electron mobility in FinFETs with a (111) channel surface fabricated by the orientation-dependent wet etching. The maximum electron mobility (u eff) is around 300-cm 2 /V-s, which is close to that in the (111) bulk MOSFETs. Moreover, the value of u eff is comparable or better than the reported ones in the usual FinFETs with a (110) channel surface prepared with careful surface treatments. This result indicates that the quality and channel surface roughness of the Si-fins by the orientation-dependent wet etching are much better than those fabricated by the conventional reactive ion etching (RIE) process.",

keywords = "Double-gate MOSFET, FinFET, Mobility, Orientation-dependent wet etching, Rectangular cross-section Si-fin",

author = "Liu, {Y. X.} and E. Sugimata and M. Masahara and Kazuhiko Endo and K. Ishii and T. Matsukawa and H. Takashima and H. Yamauchi and E. Suzuki",

year = "2005",

month = jun,

day = "17",

doi = "10.1016/j.mee.2005.04.014",

language = "English",

volume = "80",

pages = "390--393",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "SUPPL.",

note = "14th Biennial Conference on Insulating Films on Semiconductors ; Conference date: 22-06-2005 Through 24-06-2005",

}

TY - JOUR

T1 - Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

AU - Liu, Y. X.

AU - Sugimata, E.

AU - Masahara, M.

AU - Endo, Kazuhiko

AU - Ishii, K.

AU - Matsukawa, T.

AU - Takashima, H.

AU - Yamauchi, H.

AU - Suzuki, E.

PY - 2005/6/17

Y1 - 2005/6/17

N2 - This paper presents, for the first time, the experimental electron mobility in FinFETs with a (111) channel surface fabricated by the orientation-dependent wet etching. The maximum electron mobility (u eff) is around 300-cm 2 /V-s, which is close to that in the (111) bulk MOSFETs. Moreover, the value of u eff is comparable or better than the reported ones in the usual FinFETs with a (110) channel surface prepared with careful surface treatments. This result indicates that the quality and channel surface roughness of the Si-fins by the orientation-dependent wet etching are much better than those fabricated by the conventional reactive ion etching (RIE) process.

AB - This paper presents, for the first time, the experimental electron mobility in FinFETs with a (111) channel surface fabricated by the orientation-dependent wet etching. The maximum electron mobility (u eff) is around 300-cm 2 /V-s, which is close to that in the (111) bulk MOSFETs. Moreover, the value of u eff is comparable or better than the reported ones in the usual FinFETs with a (110) channel surface prepared with careful surface treatments. This result indicates that the quality and channel surface roughness of the Si-fins by the orientation-dependent wet etching are much better than those fabricated by the conventional reactive ion etching (RIE) process.

KW - Double-gate MOSFET

KW - FinFET

KW - Mobility

KW - Orientation-dependent wet etching

KW - Rectangular cross-section Si-fin

UR - http://www.scopus.com/inward/record.url?scp=19944385945&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19944385945&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2005.04.014

DO - 10.1016/j.mee.2005.04.014

M3 - Conference article

AN - SCOPUS:19944385945

SN - 0167-9317

VL - 80

SP - 390

EP - 393

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - SUPPL.

T2 - 14th Biennial Conference on Insulating Films on Semiconductors

Y2 - 22 June 2005 through 24 June 2005

ER -

Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

Abstract

Keywords

ASJC Scopus subject areas

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