Electron population above 13.5 eV in ultrahigh frequency and inductively coupled plasmas through C2F4/CF3I and C4F8/Ar gas mixtures

Toshiki Nakano; Seiji Samukawa

doi:10.1116/1.1316104

Electron population above 13.5 eV in ultrahigh frequency and inductively coupled plasmas through C₂F₄/CF₃I and C₄F₈/Ar gas mixtures

Toshiki Nakano, Seiji Samukawa

Innovative Energy Research Center

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Argon emission analysis and Langmuir probe measurements were used to study the electron population above 13.5 eV in the plasma, used for fine structure etching of silicon dioxide. Weaker dependence on the gas composition for the C₂F₄/CF₃I mixture was found using integrated electron energy distribution function (eedf) above threshold energy for argon 750.4 nm emission. The results indicate that lower charging damage of devices is expected in silica etching using the C₂F₄CF₃I chemistry.

Original language	English
Pages (from-to)	2774-2779
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	6
DOIs	https://doi.org/10.1116/1.1316104
Publication status	Published - 2000 Nov 1
Event	44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA Duration: 2000 May 30 → 2000 Jun 2

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1316104

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Electron population above 13.5 eV in ultrahigh frequency and inductively coupled plasmas through C₂F₄/CF₃I and C₄F₈/Ar gas mixtures. / Nakano, Toshiki; Samukawa, Seiji.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 6, 01.11.2000, p. 2774-2779.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "Argon emission analysis and Langmuir probe measurements were used to study the electron population above 13.5 eV in the plasma, used for fine structure etching of silicon dioxide. Weaker dependence on the gas composition for the C2F4/CF3I mixture was found using integrated electron energy distribution function (eedf) above threshold energy for argon 750.4 nm emission. The results indicate that lower charging damage of devices is expected in silica etching using the C2F4CF3I chemistry.",

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Y1 - 2000/11/1

N2 - Argon emission analysis and Langmuir probe measurements were used to study the electron population above 13.5 eV in the plasma, used for fine structure etching of silicon dioxide. Weaker dependence on the gas composition for the C2F4/CF3I mixture was found using integrated electron energy distribution function (eedf) above threshold energy for argon 750.4 nm emission. The results indicate that lower charging damage of devices is expected in silica etching using the C2F4CF3I chemistry.

AB - Argon emission analysis and Langmuir probe measurements were used to study the electron population above 13.5 eV in the plasma, used for fine structure etching of silicon dioxide. Weaker dependence on the gas composition for the C2F4/CF3I mixture was found using integrated electron energy distribution function (eedf) above threshold energy for argon 750.4 nm emission. The results indicate that lower charging damage of devices is expected in silica etching using the C2F4CF3I chemistry.

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Electron population above 13.5 eV in ultrahigh frequency and inductively coupled plasmas through C₂F₄/CF₃I and C₄F₈/Ar gas mixtures

Abstract

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