Electron tunneling through chemical oxide of silicon

T. Hattori; K. Watanabe; M. Ohashi; M. Matsuda; M. Yasutake

doi:10.1016/0169-4332(96)00026-8

Electron tunneling through chemical oxide of silicon

T. Hattori, K. Watanabe, M. Ohashi, M. Matsuda, M. Yasutake

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Carrier transport between gold and n⁺-Si through chemical oxide of Si was measured using an atomic force microscope with a conducting probe. A direct evidence for the effect of Si-H bonds on the electron tunneling current was obtained.

Original language	English
Pages (from-to)	86-89
Number of pages	4
Journal	Applied Surface Science
Volume	102
DOIs	https://doi.org/10.1016/0169-4332(96)00026-8
Publication status	Published - 1996 Aug
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/0169-4332(96)00026-8

Cite this

@article{ea740f31e5dc4c2885287940db3dee55,

title = "Electron tunneling through chemical oxide of silicon",

abstract = "Carrier transport between gold and n+-Si through chemical oxide of Si was measured using an atomic force microscope with a conducting probe. A direct evidence for the effect of Si-H bonds on the electron tunneling current was obtained.",

author = "T. Hattori and K. Watanabe and M. Ohashi and M. Matsuda and M. Yasutake",

year = "1996",

month = aug,

doi = "10.1016/0169-4332(96)00026-8",

language = "English",

volume = "102",

pages = "86--89",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

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TY - JOUR

T1 - Electron tunneling through chemical oxide of silicon

AU - Hattori, T.

AU - Watanabe, K.

AU - Ohashi, M.

AU - Matsuda, M.

AU - Yasutake, M.

PY - 1996/8

Y1 - 1996/8

N2 - Carrier transport between gold and n+-Si through chemical oxide of Si was measured using an atomic force microscope with a conducting probe. A direct evidence for the effect of Si-H bonds on the electron tunneling current was obtained.

AB - Carrier transport between gold and n+-Si through chemical oxide of Si was measured using an atomic force microscope with a conducting probe. A direct evidence for the effect of Si-H bonds on the electron tunneling current was obtained.

UR - http://www.scopus.com/inward/record.url?scp=0030564912&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030564912&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(96)00026-8

DO - 10.1016/0169-4332(96)00026-8

M3 - Article

AN - SCOPUS:0030564912

SN - 0169-4332

VL - 102

SP - 86

EP - 89

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Electron tunneling through chemical oxide of silicon

Abstract

ASJC Scopus subject areas

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