Electron tunneling through chemical oxide of silicon

T. Hattori, K. Watanabe, M. Ohashi, M. Matsuda, M. Yasutake

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Carrier transport between gold and n+-Si through chemical oxide of Si was measured using an atomic force microscope with a conducting probe. A direct evidence for the effect of Si-H bonds on the electron tunneling current was obtained.

Original languageEnglish
Pages (from-to)86-89
Number of pages4
JournalApplied Surface Science
Publication statusPublished - 1996 Aug
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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