Electronic and magnetoresistive properties of MnAs(0 0 0 1)/GaAs(1 1 1) heterostructures

Kenji Narita, Masafumi Shirai

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Electronic band-structure calculations are carried out for the MnAs(0 0 0 1)/GaAs(1 1 1) multilayers by using the linearized muffin-tin-orbital method within the atomic sphere approximation. The exchange splitting of Mn 3d states between spin-up and spin-down bands as well as the magnitude of local magnetic moment of Mn atoms are reduced remarkably for the Mn sites near the heterointerface compared with those in the bulk of MnAs. On the other hand, the spin-polarization at the Fermi level is enhanced for the MnAs monolayers near the heterointerface.

Original languageEnglish
Pages (from-to)433-436
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-3
Publication statusPublished - 2001 May


  • Electronic band-structure calculations
  • Ferromagnet/semiconductor heterostructure
  • Tunneling magnetoresistance


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