TY - JOUR
T1 - Electronic and transport properties of Eu-substituted infinite-layer strontium ferrite thin films
AU - Chikamatsu, Akira
AU - Matsuyama, Toshiya
AU - Katayama, Tsukasa
AU - Hirose, Yasushi
AU - Kumigashira, Hiroshi
AU - Oshima, Masaharu
AU - Fukumura, Tomoteru
AU - Hasegawa, Tetsuya
PY - 2013
Y1 - 2013
N2 - We investigated the electronic and carrier transport properties of Eu-substituted infinite-layered SrFeO2 (Eu:SrFeO2) epitaxial thin films. X-ray photoemission and absorption spectroscopy measurements revealed that the Fe and Eu ions in the Eu:SrFeO2 films were essentially divalent and trivalent, respectively, regardless of the Eu ion content. Based on the transport measurements performed at 300 K, the carrier concentration (ne) and Hall mobility of the Eu:SrFeO2 (x=0.15) films were found to be 2.5 × 1019 cm-3 and 0.94 cm2 V-1 s-1, respectively. The carrier activation efficiency of Eu3+, defined as ne/n Eu (where nEu is the Eu ion concentration), was as low as ∼0.9%. We speculate that excess oxygen atoms incorporated between FeO 2 sheets behave as carrier compensators and/or strong scatterers.
AB - We investigated the electronic and carrier transport properties of Eu-substituted infinite-layered SrFeO2 (Eu:SrFeO2) epitaxial thin films. X-ray photoemission and absorption spectroscopy measurements revealed that the Fe and Eu ions in the Eu:SrFeO2 films were essentially divalent and trivalent, respectively, regardless of the Eu ion content. Based on the transport measurements performed at 300 K, the carrier concentration (ne) and Hall mobility of the Eu:SrFeO2 (x=0.15) films were found to be 2.5 × 1019 cm-3 and 0.94 cm2 V-1 s-1, respectively. The carrier activation efficiency of Eu3+, defined as ne/n Eu (where nEu is the Eu ion concentration), was as low as ∼0.9%. We speculate that excess oxygen atoms incorporated between FeO 2 sheets behave as carrier compensators and/or strong scatterers.
KW - Characterization
KW - Doping
KW - Laser epitaxy
KW - Oxides
KW - Semiconducting materials
KW - Topotaxy
UR - http://www.scopus.com/inward/record.url?scp=84885476354&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885476354&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2012.12.067
DO - 10.1016/j.jcrysgro.2012.12.067
M3 - Article
AN - SCOPUS:84885476354
SN - 0022-0248
VL - 378
SP - 165
EP - 167
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -