Electronic band structure of transparent conductor: Nb-doped anatase TiO2

Taro Hitosugi; Hideyuki Kamisaka; Koichi Yamashita; Hiroyuki Nogawa; Yutaka Furubayashi; Shoichiro Nakao; Naoomi Yamada; Akira Chikamatsu; Hiroshi Kumigashira; Masaharu Oshima; Yasushi Hirose; Toshihiro Shimada; Tetsuya Hasegawa

doi:10.1143/APEX.1.111203

Electronic band structure of transparent conductor: Nb-doped anatase TiO₂

Taro Hitosugi, Hideyuki Kamisaka, Koichi Yamashita, Hiroyuki Nogawa, Yutaka Furubayashi, Shoichiro Nakao, Naoomi Yamada, Akira Chikamatsu, Hiroshi Kumigashira, Masaharu Oshima, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

79 Citations (Scopus)

Abstract

We have investigated electronic band structure of a transparent conducting oxide, Nb-doped anatase TiO₂ (TNO), by means of firstprinciples band calculations and photoemission measurements. The band calculations revealed that Nb 4d orbitais are strongly hybridized with Ti 3d ones to form a d-nature conduction band, without impurity states in the in-gap region, resulting in high carrier density exceeding 1021 cm-3 and excellent optical transparency in the visible region. Furthermore, we confirmed that the results of valence band and corelevel photoemission measurements are consistent with prediction by the present band calculations.

Original language	English
Pages (from-to)	1112031-1112033
Number of pages	3
Journal	Applied Physics Express
Volume	1
Issue number	11
DOIs	https://doi.org/10.1143/APEX.1.111203
Publication status	Published - 2008 Nov

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title = "Electronic band structure of transparent conductor: Nb-doped anatase TiO2",

abstract = "We have investigated electronic band structure of a transparent conducting oxide, Nb-doped anatase TiO2 (TNO), by means of firstprinciples band calculations and photoemission measurements. The band calculations revealed that Nb 4d orbitais are strongly hybridized with Ti 3d ones to form a d-nature conduction band, without impurity states in the in-gap region, resulting in high carrier density exceeding 1021 cm-3 and excellent optical transparency in the visible region. Furthermore, we confirmed that the results of valence band and corelevel photoemission measurements are consistent with prediction by the present band calculations.",

author = "Taro Hitosugi and Hideyuki Kamisaka and Koichi Yamashita and Hiroyuki Nogawa and Yutaka Furubayashi and Shoichiro Nakao and Naoomi Yamada and Akira Chikamatsu and Hiroshi Kumigashira and Masaharu Oshima and Yasushi Hirose and Toshihiro Shimada and Tetsuya Hasegawa",

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doi = "10.1143/APEX.1.111203",

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T1 - Electronic band structure of transparent conductor

T2 - Nb-doped anatase TiO2

AU - Hitosugi, Taro

AU - Kamisaka, Hideyuki

AU - Yamashita, Koichi

AU - Nogawa, Hiroyuki

AU - Furubayashi, Yutaka

AU - Nakao, Shoichiro

AU - Yamada, Naoomi

AU - Chikamatsu, Akira

AU - Kumigashira, Hiroshi

AU - Oshima, Masaharu

AU - Hirose, Yasushi

AU - Shimada, Toshihiro

AU - Hasegawa, Tetsuya

PY - 2008/11

Y1 - 2008/11

N2 - We have investigated electronic band structure of a transparent conducting oxide, Nb-doped anatase TiO2 (TNO), by means of firstprinciples band calculations and photoemission measurements. The band calculations revealed that Nb 4d orbitais are strongly hybridized with Ti 3d ones to form a d-nature conduction band, without impurity states in the in-gap region, resulting in high carrier density exceeding 1021 cm-3 and excellent optical transparency in the visible region. Furthermore, we confirmed that the results of valence band and corelevel photoemission measurements are consistent with prediction by the present band calculations.

AB - We have investigated electronic band structure of a transparent conducting oxide, Nb-doped anatase TiO2 (TNO), by means of firstprinciples band calculations and photoemission measurements. The band calculations revealed that Nb 4d orbitais are strongly hybridized with Ti 3d ones to form a d-nature conduction band, without impurity states in the in-gap region, resulting in high carrier density exceeding 1021 cm-3 and excellent optical transparency in the visible region. Furthermore, we confirmed that the results of valence band and corelevel photoemission measurements are consistent with prediction by the present band calculations.

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Electronic band structure of transparent conductor: Nb-doped anatase TiO₂

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