Electronic inhomogeneity as a function of out-of-plane disorder in Ln-doped Bi2201 superconductors

A. Sugimoto; S. Kashiwaya; H. Eisaki; H. Kashiwaya; H. Tsuchiura; Y. Tanaka; K. Fujita; S. Uchida

doi:10.1063/1.2354807

Electronic inhomogeneity as a function of out-of-plane disorder in Ln-doped Bi2201 superconductors

A. Sugimoto, S. Kashiwaya, H. Eisaki, H. Kashiwaya, H. Tsuchiura, Y. Tanaka, K. Fujita, S. Uchida

ENG - Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The local electronic properties of Bi₂Sr_1.6Ln _0.4CuO_6+y, (Ln = La, Gd) is investigated by scanning tunneling microscopy/spectroscopy (STM/STS). As increasing the magnitude of out-of-plane disorder by increasing the mismatch of Ln-ion doping, enlargement of deviation of Δ (σΔ) is detected. The value of σΔ is linearly enhanced as decreasing T_c including the results of optimum Bi₂Sr₂CaCu₂O_8+y. These results suggest the out-of-plane disorder suppresses the superconductivity and enhances pseudogap regions in superconducting state efficiently.

Original language	English
Title of host publication	LOW TEMPERATURE PHYSICS
Subtitle of host publication	24th International Conference on Low Temperature Physics - LT24
Pages	507-508
Number of pages	2
DOIs	https://doi.org/10.1063/1.2354807
Publication status	Published - 2006
Event	LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States Duration: 2006 Aug 10 → 2006 Oct 17

Publication series

Name	AIP Conference Proceedings
Volume	850
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
Country/Territory	United States
City	Orlando, FL
Period	06/8/10 → 06/10/17

Keywords

Bi2201
High-T superconductor
Inhomogeneity
STM/STS

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10.1063/1.2354807

Cite this

Sugimoto, A., Kashiwaya, S., Eisaki, H., Kashiwaya, H., Tsuchiura, H., Tanaka, Y., Fujita, K., & Uchida, S. (2006). Electronic inhomogeneity as a function of out-of-plane disorder in Ln-doped Bi2201 superconductors. In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 (pp. 507-508). (AIP Conference Proceedings; Vol. 850). https://doi.org/10.1063/1.2354807

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title = "Electronic inhomogeneity as a function of out-of-plane disorder in Ln-doped Bi2201 superconductors",

abstract = "The local electronic properties of Bi2Sr1.6Ln 0.4CuO6+y, (Ln = La, Gd) is investigated by scanning tunneling microscopy/spectroscopy (STM/STS). As increasing the magnitude of out-of-plane disorder by increasing the mismatch of Ln-ion doping, enlargement of deviation of Δ (σΔ) is detected. The value of σΔ is linearly enhanced as decreasing Tc including the results of optimum Bi2Sr2CaCu2O8+y. These results suggest the out-of-plane disorder suppresses the superconductivity and enhances pseudogap regions in superconducting state efficiently.",

keywords = "Bi2201, High-T superconductor, Inhomogeneity, STM/STS",

author = "A. Sugimoto and S. Kashiwaya and H. Eisaki and H. Kashiwaya and H. Tsuchiura and Y. Tanaka and K. Fujita and S. Uchida",

year = "2006",

doi = "10.1063/1.2354807",

language = "English",

isbn = "0735403473",

series = "AIP Conference Proceedings",

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note = "LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 ; Conference date: 10-08-2006 Through 17-10-2006",

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Sugimoto, A, Kashiwaya, S, Eisaki, H, Kashiwaya, H, Tsuchiura, H, Tanaka, Y, Fujita, K & Uchida, S 2006, Electronic inhomogeneity as a function of out-of-plane disorder in Ln-doped Bi2201 superconductors. in LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP Conference Proceedings, vol. 850, pp. 507-508, LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24, Orlando, FL, United States, 06/8/10. https://doi.org/10.1063/1.2354807

Electronic inhomogeneity as a function of out-of-plane disorder in Ln-doped Bi2201 superconductors. / Sugimoto, A.; Kashiwaya, S.; Eisaki, H. et al.
LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. 2006. p. 507-508 (AIP Conference Proceedings; Vol. 850).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Electronic inhomogeneity as a function of out-of-plane disorder in Ln-doped Bi2201 superconductors

AU - Sugimoto, A.

AU - Kashiwaya, S.

AU - Eisaki, H.

AU - Kashiwaya, H.

AU - Tsuchiura, H.

AU - Tanaka, Y.

AU - Fujita, K.

AU - Uchida, S.

PY - 2006

Y1 - 2006

N2 - The local electronic properties of Bi2Sr1.6Ln 0.4CuO6+y, (Ln = La, Gd) is investigated by scanning tunneling microscopy/spectroscopy (STM/STS). As increasing the magnitude of out-of-plane disorder by increasing the mismatch of Ln-ion doping, enlargement of deviation of Δ (σΔ) is detected. The value of σΔ is linearly enhanced as decreasing Tc including the results of optimum Bi2Sr2CaCu2O8+y. These results suggest the out-of-plane disorder suppresses the superconductivity and enhances pseudogap regions in superconducting state efficiently.

AB - The local electronic properties of Bi2Sr1.6Ln 0.4CuO6+y, (Ln = La, Gd) is investigated by scanning tunneling microscopy/spectroscopy (STM/STS). As increasing the magnitude of out-of-plane disorder by increasing the mismatch of Ln-ion doping, enlargement of deviation of Δ (σΔ) is detected. The value of σΔ is linearly enhanced as decreasing Tc including the results of optimum Bi2Sr2CaCu2O8+y. These results suggest the out-of-plane disorder suppresses the superconductivity and enhances pseudogap regions in superconducting state efficiently.

KW - Bi2201

KW - High-T superconductor

KW - Inhomogeneity

KW - STM/STS

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BT - LOW TEMPERATURE PHYSICS

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Electronic inhomogeneity as a function of out-of-plane disorder in Ln-doped Bi2201 superconductors

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