Electronic properties and strain sensitivity of CVD-grown graphene with acetylene

Meng Yang, Shinichirou Sasaki, Masato Ohnishi, Ken Suzuki, Hideo Miura

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


Although many studies have shown that large-area monolayer graphene can be formed by chemical vapor deposition (CVD) using methane gas, the growth of monolayer graphene using highly reactive acetylene gas remains a big challenge. In this study, we synthesized a uniform monolayer graphene film by low-pressure CVD (LPCVD) with acetylene gas. On the base of Raman spectroscopy measurements, it was found that up to 95% of the as-grown graphene is monolayer. The electronic properties and strain sensitivity of the LPCVD-grown graphene with acetylene were also evaluated by testing the fabricated field-effect transistors (FETs) and strain sensors. The derived carrier mobility and gauge factor are 862-1150cm2/(V&s) and 3.4, respectively, revealing the potential for high-speed FETs and strain sensor applications. We also investigated the relationship between the electronic properties and the graphene domain size.

Original languageEnglish
Article number04EP05
JournalJapanese Journal of Applied Physics
Issue number4
Publication statusPublished - 2016 Apr


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