TY - JOUR
T1 - Electronic properties of antiphase boundaries in CuPt-ordered GaInP alloys
AU - Ohno, Y.
N1 - Funding Information:
This work was partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Young Scientist (A)(2) no.15681006, 2003–2005. GaInP alloys were provided by Mitsubishi Chemical Co. I am gratefully acknowledged to Prof. S. Takeda for use of the experimental facilities and for fruitful discussion and comments.
PY - 2006/4/1
Y1 - 2006/4/1
N2 - Electronic properties of antiphase boundaries (APBs) in CuPt-ordered GaInP alloys were studied. The temperature-dependent intensity, polarization direction, and photon energy of low-energy emission lines, obtained with high spatial resolution by polarized cathodoluminescence spectroscopy in a transmission electron microscope, were consistently expounded with the model that small InP layers on APBs sandwiched between almost-completely ordered domains (about 2-10 nm in size), which were found out by cross-sectional scanning tunneling microscopy, act as type-II quantum wells and they emit light linearly polarized parallel to the layers.
AB - Electronic properties of antiphase boundaries (APBs) in CuPt-ordered GaInP alloys were studied. The temperature-dependent intensity, polarization direction, and photon energy of low-energy emission lines, obtained with high spatial resolution by polarized cathodoluminescence spectroscopy in a transmission electron microscope, were consistently expounded with the model that small InP layers on APBs sandwiched between almost-completely ordered domains (about 2-10 nm in size), which were found out by cross-sectional scanning tunneling microscopy, act as type-II quantum wells and they emit light linearly polarized parallel to the layers.
KW - Antiphase boundaries
KW - CuPt-ordered GaInP alloys
KW - Polarized cathodoluminescence spectroscopy in a transmission electron microscope
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U2 - 10.1016/j.physb.2005.12.210
DO - 10.1016/j.physb.2005.12.210
M3 - Conference article
AN - SCOPUS:33645229159
SN - 0921-4526
VL - 376-377
SP - 845
EP - 848
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 1
T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors
Y2 - 24 July 2005 through 29 July 2005
ER -