TY - JOUR
T1 - Electronic properties of nano-polycrystalline diamond synthesised by high-pressure and high-temperature technique
AU - Fukuta, Rei
AU - Ishikawa, Fumitaro
AU - Ishikawa, Akihiro
AU - Hamada, Kohsuke
AU - Matsushita, Masafumi
AU - Ohfuji, Hiroaki
AU - Shinmei, Toru
AU - Irifune, Tetsuo
N1 - Funding Information:
This study was partly supported by the Research Unit project and the Joint Usage/Research Center PRIUS by Ehime University and KAKENHI (No. 15K13957 and No. 17K18883 ) from the Japan Society for the Promotion of Science. The authors greatly acknowledge experimental supports for CL study in National Institute for Materials Science and PL study by Y. Hamanaka of Nagoya Institute of Technology under the Nanotechnology Platform Project operated by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.
Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2018/4
Y1 - 2018/4
N2 - We investigated inherent electronic properties of ultra-hard nano-polycrystalline diamond (NPD) synthesised at 15 GPa and 2300 °C. NPD exhibited a p-type semiconducting property with a resistivity of 1 × 106 and 4 × 102 Ω cm at 400 °C and 800 °C, respectively, with activation energies as high as 1.2 eV. The mobility was 2 cm2/Vs at 800 °C. The observed transport was considered to be attributed to grain boundary. Cathodoluminescence spectra show defect-related peaks with dominant peaks at 2.8 eV close to band-A and peaks below 2 eV, which is possibly related to crystal defects. In contrast, photoluminescence excited with a wavelength of 405 nm resonantly excited peaks having energies lower than 2.1 eV. The large density of crystalline defects such as grain boundaries and impurities in the NPD would result in the characteristic electronic and optical properties.
AB - We investigated inherent electronic properties of ultra-hard nano-polycrystalline diamond (NPD) synthesised at 15 GPa and 2300 °C. NPD exhibited a p-type semiconducting property with a resistivity of 1 × 106 and 4 × 102 Ω cm at 400 °C and 800 °C, respectively, with activation energies as high as 1.2 eV. The mobility was 2 cm2/Vs at 800 °C. The observed transport was considered to be attributed to grain boundary. Cathodoluminescence spectra show defect-related peaks with dominant peaks at 2.8 eV close to band-A and peaks below 2 eV, which is possibly related to crystal defects. In contrast, photoluminescence excited with a wavelength of 405 nm resonantly excited peaks having energies lower than 2.1 eV. The large density of crystalline defects such as grain boundaries and impurities in the NPD would result in the characteristic electronic and optical properties.
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U2 - 10.1016/j.diamond.2018.03.007
DO - 10.1016/j.diamond.2018.03.007
M3 - Article
AN - SCOPUS:85043758458
SN - 0925-9635
VL - 84
SP - 66
EP - 70
JO - Diamond and Related Materials
JF - Diamond and Related Materials
ER -