TY - JOUR
T1 - Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating
AU - Ueno, Naofumi
AU - Sakuraba, Masao
AU - Osakabe, Yoshihiro
AU - Akima, Hisanao
AU - Sato, Shigeo
N1 - Funding Information:
This study was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, the Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University and the Japan Society for the Promotion of Science (JSPS) Core-to-Core Program, A. Advanced Research Networks “International Collaborative Research Center on Atomically Controlled Processing for Ultralarge Scale Integration”. We are grateful to Mr. Koichi Seo and Dr. Shuji Kusano (PANalytical Japan, Spectris Co., Ltd.) for their ultra-fast XRD-RSM measurements using X'Pert3 MRD diffractometer with 3D detection system (PIXcel3D) and useful advice on our rocking-curve measurements using conventional X'Pert PRO MRD diffractometer.
Publisher Copyright:
© 2016 Elsevier Ltd
PY - 2017/11/1
Y1 - 2017/11/1
N2 - By using our low-energy Ar plasma enhanced chemical vapor deposition (CVD) at a substrate temperature below 100 °C during plasma exposure without substrate heating, modulation of valence band structures and infrared photoluminescence can be observed by change of strain in a Si/strained Si0.4Ge0.6/Si(100) heterostructure. For the strained Si0.5Ge0.5 film, Hall mobility at room temperature was confirmed to be as high as 660 cm2 V−1 s−1 with a carrier concentration of 1.3×1018 cm−3 for n-type carrier, although the carrier origin was unclear. Moreover, good rectifying characteristics were obtained for a p+Si/nSi0.5Ge0.5 heterojunction diode. This indicates that the strained Si-Ge alloy and Si films and their heterostructures epitaxially grown by our low-energy Ar plasma enhanced CVD without substrate heating can be applicable effectively for various semiconductor devices utilizing high carrier mobility, built-in potential by doping and band engineering.
AB - By using our low-energy Ar plasma enhanced chemical vapor deposition (CVD) at a substrate temperature below 100 °C during plasma exposure without substrate heating, modulation of valence band structures and infrared photoluminescence can be observed by change of strain in a Si/strained Si0.4Ge0.6/Si(100) heterostructure. For the strained Si0.5Ge0.5 film, Hall mobility at room temperature was confirmed to be as high as 660 cm2 V−1 s−1 with a carrier concentration of 1.3×1018 cm−3 for n-type carrier, although the carrier origin was unclear. Moreover, good rectifying characteristics were obtained for a p+Si/nSi0.5Ge0.5 heterojunction diode. This indicates that the strained Si-Ge alloy and Si films and their heterostructures epitaxially grown by our low-energy Ar plasma enhanced CVD without substrate heating can be applicable effectively for various semiconductor devices utilizing high carrier mobility, built-in potential by doping and band engineering.
KW - Heteroepitaxial growth
KW - Plasma chemical vapor deposition
KW - pn junction diode
KW - Silicon
KW - Silicon-germanium alloy
KW - Valence band
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U2 - 10.1016/j.mssp.2016.09.035
DO - 10.1016/j.mssp.2016.09.035
M3 - Article
AN - SCOPUS:85008930394
SN - 1369-8001
VL - 70
SP - 55
EP - 62
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
ER -