Raman scattering from photo-created free carriers in undoped GaP and GaAs1-xPx (x = 0.85, 0.73 and 0.66) under high excitation intensity has been studied. Two new Raman bands have been observed and assigned to electronic transitions from the split-off hole band to the heavy hole band and from the light hole band to the heavy hole band. The spin-orbit splitting energies in these crystals have been determined from the analysis of observed Raman bands, and compared with other experimental values.
|Number of pages||4|
|Journal||Solid State Communications|
|Publication status||Published - 1985 Jul|
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry