Electronic Raman scattering from inter-valence band transition in photo-excited GaP and GaAs1-xPx crystals

H. Yugami; S. Nakashima; M. Hangyo; K. Sakai; A. Mitsuishi

doi:10.1016/0038-1098(85)90270-4

Electronic Raman scattering from inter-valence band transition in photo-excited GaP and GaAs_1-xP_x crystals

H. Yugami, S. Nakashima, M. Hangyo, K. Sakai, A. Mitsuishi

Research output: Contribution to journal › Article › peer-review

Abstract

Raman scattering from photo-created free carriers in undoped GaP and GaAs_1-xP_x (x = 0.85, 0.73 and 0.66) under high excitation intensity has been studied. Two new Raman bands have been observed and assigned to electronic transitions from the split-off hole band to the heavy hole band and from the light hole band to the heavy hole band. The spin-orbit splitting energies in these crystals have been determined from the analysis of observed Raman bands, and compared with other experimental values.

Original language	English
Pages (from-to)	159-162
Number of pages	4
Journal	Solid State Communications
Volume	55
Issue number	2
DOIs	https://doi.org/10.1016/0038-1098(85)90270-4
Publication status	Published - 1985 Jul
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(85)90270-4

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title = "Electronic Raman scattering from inter-valence band transition in photo-excited GaP and GaAs1-xPx crystals",

abstract = "Raman scattering from photo-created free carriers in undoped GaP and GaAs1-xPx (x = 0.85, 0.73 and 0.66) under high excitation intensity has been studied. Two new Raman bands have been observed and assigned to electronic transitions from the split-off hole band to the heavy hole band and from the light hole band to the heavy hole band. The spin-orbit splitting energies in these crystals have been determined from the analysis of observed Raman bands, and compared with other experimental values.",

author = "H. Yugami and S. Nakashima and M. Hangyo and K. Sakai and A. Mitsuishi",

year = "1985",

month = jul,

doi = "10.1016/0038-1098(85)90270-4",

language = "English",

volume = "55",

pages = "159--162",

journal = "Solid State Communications",

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T1 - Electronic Raman scattering from inter-valence band transition in photo-excited GaP and GaAs1-xPx crystals

AU - Yugami, H.

AU - Nakashima, S.

AU - Hangyo, M.

AU - Sakai, K.

AU - Mitsuishi, A.

PY - 1985/7

Y1 - 1985/7

N2 - Raman scattering from photo-created free carriers in undoped GaP and GaAs1-xPx (x = 0.85, 0.73 and 0.66) under high excitation intensity has been studied. Two new Raman bands have been observed and assigned to electronic transitions from the split-off hole band to the heavy hole band and from the light hole band to the heavy hole band. The spin-orbit splitting energies in these crystals have been determined from the analysis of observed Raman bands, and compared with other experimental values.

AB - Raman scattering from photo-created free carriers in undoped GaP and GaAs1-xPx (x = 0.85, 0.73 and 0.66) under high excitation intensity has been studied. Two new Raman bands have been observed and assigned to electronic transitions from the split-off hole band to the heavy hole band and from the light hole band to the heavy hole band. The spin-orbit splitting energies in these crystals have been determined from the analysis of observed Raman bands, and compared with other experimental values.

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JO - Solid State Communications

JF - Solid State Communications

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ER -

Electronic Raman scattering from inter-valence band transition in photo-excited GaP and GaAs_1-xP_x crystals

Abstract

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