Electronic states in a semimetal Ce 3Sn 7

Yusuke Okuda, Michi To Suzuki, Hisatomo Harima, Miho Nakashima, Shingo Kirita, Tatsuo C. Kobayashi, Rikio Settai, Yoshichika Onuki

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We carried out the de Haas-van Alphen (dHvA) measurement and the pressure experiment of the electrical resistivity for an antiferromagnet Ce 3Sn 7 with the orthorhombic crystal structure. The detected dHvA branches are many in number and their dHvA frequencies are extremely small in magnitude, indicating that Ce 3Sn 7 is a semimetal. This is consistent with the result of the energy band calculations under the assumption that the 4f electrons of two Ce atoms in the 2(a) site are localized and the 4f electron of one Ce atom in the 4(i) site is itinerant. In the pressure experiment, the Néel temperature of T N = 5.3 K is found to slightly increase with increasing pressure, becomes maximum around 1 GPa, then decreases steeply with further increasing pressure and most likely becomes zero between 3 and 4 GPa. The antiferromagnetic state is changed into the non-magnetic state under pressure.

Original languageEnglish
Article number044715
JournalJournal of the Physical Society of Japan
Issue number4
Publication statusPublished - 2006 Apr


  • Band calculation
  • Ce Sn
  • De Haas-van Alphen effect
  • Pressure
  • Semimetal


Dive into the research topics of 'Electronic states in a semimetal Ce 3Sn 7'. Together they form a unique fingerprint.

Cite this