Electronic states of the antiferromagnet UGa3

Dai Aoki, Norihito Suzuki, Kousaku Miyake, Yoshihiko Inada, Rikio Settai, Kiyohiro Sugiyama, Etsuji Yamamoto, Yoshinori Haga, Yoshichika Onuki, Tetsutaro Inoue, Koichi Kindo, Hitoshi Sugawara, Hideyuki Sato, Hiroshi Yamagami

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

We have grown a single crystal with the residual resistivity ratio of 81, and studied its electronic properties of the cubic antiferromagnetic compound UGa3. From the transverse magnetoresistance experiments, UGa3 has been found to be a compensated metal with equal carrier numbers of electrons and holes. In the de Haas-van Alphen experiments we have detected nine closed Fermi surfaces. Detected cyclotron effective mass is relatively large, ranging from 2.3 to 9.4 m0. The topology of the Fermi surface is compared to the result of energy band calculations.

Original languageEnglish
Pages (from-to)538-546
Number of pages9
Journaljournal of the physical society of japan
Volume70
Issue number2
DOIs
Publication statusPublished - 2001 Feb 1
Externally publishedYes

Keywords

  • Fermi surface
  • Hall coefficient
  • Magnetoresistance
  • Thermoelectric power
  • UGa
  • dHvA effect

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Electronic states of the antiferromagnet UGa3'. Together they form a unique fingerprint.

Cite this