Electronic structure of Ga1-xCrxN investigated by photoemission spectroscopy

Jungjin J. Kim, H. Makino, K. Yamazaki, A. Ino, H. Namatame, M. Taniguchi, T. Hanada, M. W. Cho, T. Yao

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga0.937Cr0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization.

Original languageEnglish
Pages (from-to)603-606
Number of pages4
JournalCurrent Applied Physics
Issue number6
Publication statusPublished - 2004 Nov


  • Ferromagnetic DMS
  • GaCrN
  • Photoemission spectroscopy


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