Abstract
The electronic structure near the top of the valence band and the bottom of the conduction band for Sr-doped LaScO3 single crystal was investigated by X-ray absorption spectroscopy (XAS). The conduction band consists mainly of the Sc 3d state hybridized with the O 2p state. A defect-induced localized level is observed below the Sc 3d state of the Sr-doped single crystal. The XAS spectrum of a wet-annealed crystal shows a broad absorption around the top of the valence band that may be related to the level of holes based on the related charge carrier map of Sr-doped LaScO3.
Original language | English |
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Article number | 010208 |
Journal | Japanese Journal of Applied Physics |
Volume | 49 |
Issue number | 1 Part 1 |
DOIs | |
Publication status | Published - 2010 |