Electronic structure of SrTi 0.99Sc 0.01O 3 thin film studied by high-resolution soft-x-ray spectroscopy

Teppei Okumura; Tomohiro Inoue; Yuji Tasaki; Enju Sakai; Hiroshi Kumigashira; Tohru Higuchi

doi:10.1143/JPSJ.81.094705

Electronic structure of SrTi _0.99Sc _0.01O ₃ thin film studied by high-resolution soft-x-ray spectroscopy

Teppei Okumura, Tomohiro Inoue, Yuji Tasaki, Enju Sakai, Hiroshi Kumigashira, Tohru Higuchi

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The electronic structure of SrTi _0.99Sc _0.01O ₃ thin film has been studied by X-ray absorption spectroscopy (XAS) and high-resolution photoemission spectroscopy (HRPES). The evidence of Sc ³⁺ substitution into Ti ⁴⁺ sites is obtained from the Ti 2p and Sc 2p XAS spectra. The HRPES spectra in the valence band and the core level indicate that the valence band is mainly composed of O 2p state hybridized with Ti 3d state. The Fermi level (E _F) locates at ∼1:2eV from the top of the valence band. The energy separation between the top of the valence band and EF is in good agreement with the activation energy (E _a), which is estimated from the Arrhenius plot of electrical conductivity. These findings may indicate that the SrTi _0.99Sc _0.01O ₃ thin film is ap-type oxide semiconductor with a large E _a.

Original language	English
Article number	094705
Journal	journal of the physical society of japan
Volume	81
Issue number	9
DOIs	https://doi.org/10.1143/JPSJ.81.094705
Publication status	Published - 2012 Sept
Externally published	Yes

Keywords

Conductivity
Electronic structure
High-resolution photoemission spectroscopy (HRPES)
P-type oxide semiconductor
SrTi Sc O
Thin film

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1143/JPSJ.81.094705

Cite this

@article{7f9e298af9e24e23bdd85dd63b35688a,

title = "Electronic structure of SrTi 0.99Sc 0.01O 3 thin film studied by high-resolution soft-x-ray spectroscopy",

abstract = "The electronic structure of SrTi 0.99Sc 0.01O 3 thin film has been studied by X-ray absorption spectroscopy (XAS) and high-resolution photoemission spectroscopy (HRPES). The evidence of Sc 3+ substitution into Ti 4+ sites is obtained from the Ti 2p and Sc 2p XAS spectra. The HRPES spectra in the valence band and the core level indicate that the valence band is mainly composed of O 2p state hybridized with Ti 3d state. The Fermi level (E F) locates at ∼1:2eV from the top of the valence band. The energy separation between the top of the valence band and EF is in good agreement with the activation energy (E a), which is estimated from the Arrhenius plot of electrical conductivity. These findings may indicate that the SrTi 0.99Sc 0.01O 3 thin film is ap-type oxide semiconductor with a large E a.",

keywords = "Conductivity, Electronic structure, High-resolution photoemission spectroscopy (HRPES), P-type oxide semiconductor, SrTi Sc O, Thin film",

author = "Teppei Okumura and Tomohiro Inoue and Yuji Tasaki and Enju Sakai and Hiroshi Kumigashira and Tohru Higuchi",

year = "2012",

month = sep,

doi = "10.1143/JPSJ.81.094705",

language = "English",

volume = "81",

journal = "Journal of the Physical Society of Japan",

issn = "0031-9015",

publisher = "Physical Society of Japan",

number = "9",

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TY - JOUR

T1 - Electronic structure of SrTi 0.99Sc 0.01O 3 thin film studied by high-resolution soft-x-ray spectroscopy

AU - Okumura, Teppei

AU - Inoue, Tomohiro

AU - Tasaki, Yuji

AU - Sakai, Enju

AU - Kumigashira, Hiroshi

AU - Higuchi, Tohru

PY - 2012/9

Y1 - 2012/9

N2 - The electronic structure of SrTi 0.99Sc 0.01O 3 thin film has been studied by X-ray absorption spectroscopy (XAS) and high-resolution photoemission spectroscopy (HRPES). The evidence of Sc 3+ substitution into Ti 4+ sites is obtained from the Ti 2p and Sc 2p XAS spectra. The HRPES spectra in the valence band and the core level indicate that the valence band is mainly composed of O 2p state hybridized with Ti 3d state. The Fermi level (E F) locates at ∼1:2eV from the top of the valence band. The energy separation between the top of the valence band and EF is in good agreement with the activation energy (E a), which is estimated from the Arrhenius plot of electrical conductivity. These findings may indicate that the SrTi 0.99Sc 0.01O 3 thin film is ap-type oxide semiconductor with a large E a.

AB - The electronic structure of SrTi 0.99Sc 0.01O 3 thin film has been studied by X-ray absorption spectroscopy (XAS) and high-resolution photoemission spectroscopy (HRPES). The evidence of Sc 3+ substitution into Ti 4+ sites is obtained from the Ti 2p and Sc 2p XAS spectra. The HRPES spectra in the valence band and the core level indicate that the valence band is mainly composed of O 2p state hybridized with Ti 3d state. The Fermi level (E F) locates at ∼1:2eV from the top of the valence band. The energy separation between the top of the valence band and EF is in good agreement with the activation energy (E a), which is estimated from the Arrhenius plot of electrical conductivity. These findings may indicate that the SrTi 0.99Sc 0.01O 3 thin film is ap-type oxide semiconductor with a large E a.

KW - Conductivity

KW - Electronic structure

KW - High-resolution photoemission spectroscopy (HRPES)

KW - P-type oxide semiconductor

KW - SrTi Sc O

KW - Thin film

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