Electronic structures of layered C60 and C70 on Si(100) surface

Yoshiyuki Kawazoe, Hiroshi Kamiyama, Yutaka Maruyama, Kaoru Ohno

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

Two-dimensional band structure calculation is carried out for the c(4 x 3) C60 and perfect triangular C70 lattices by using a mixed-basis approach in which wave functions are expanded with not only plane waves but also the Is and 2p atomic orbitals of carbon atoms. The effect of the Si(100) substrate is taken into account by simply assuming a charge transfer from Si dimers and a positive charge back-ground. Wave functions of excess charge on these microclusters are analyzed, and the resulting partial charge distributions explain the electron cloud images observed recently with scanning tunneling microscopy (STM).

Original languageEnglish
Pages (from-to)1433-1437
Number of pages5
JournalJapanese Journal of Applied Physics
Volume32
Issue number3 S
DOIs
Publication statusPublished - 1993 Mar

Keywords

  • Electronic structure
  • Fullerene
  • Mixed-basis
  • Silicon
  • STM
  • Surface
  • Theory

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