Electronic structures of the Si(001)2×3-In surface

H. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani

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Electronic structures of a single-domain Si(001)2×3-In surface were investigated by polarization-dependent angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation. Six surface-state bands, denoted as D, (Formula presented), (Formula presented), (Formula presented), (Formula presented), and (Formula presented), are identified within the bulk band gap, whose dispersions and symmetry properties are determined throughout the surface Brillouin zone. From these results and a comparison with the recent ARPES results on Si(001)2×2-In [H. W. Yeom et al., Phys. Rev. B 53, 1948 (1996)], the origins of the surface states are assigned as the dangling-bond state (D) of Si dimers not bonded to In dimers, the dimer-bond state ((Formula presented)) of In dimers, and the backbond states ((Formula presented), (Formula presented), (Formula presented), and (Formula presented)) due to the bonds between In and Si dimers.

Original languageEnglish
Pages (from-to)15669-15674
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number23
Publication statusPublished - 1997


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