Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes

Y. F. Li; R. Hatakeyama; T. Kaneko; T. Izumida; T. Okada; T. Kato

doi:10.1063/1.2339931

Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes

Y. F. Li, R. Hatakeyama, T. Kaneko, T. Izumida, T. Okada, T. Kato

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes (DWNTs) synthesized via a plasma irradiation method are investigated by fabricating them as field-effect transistor devices. The authors' results indicate that Cs-encapsulated DWNTs exhibit a high performance n-type characteristic in contrast to ambipolar behavior of pristine DWNTs. Coulomb blockade oscillations are observed on the Cs-encapsulated DWNTs at low temperatures. In addition, it is found that the semiconducting characteristics of the as-synthesized Cs-encapsulated DWNTs can possibly be controllable by adjusting applied negative dc bias voltages during the plasma synthesis process.

Original language	English
Article number	093110
Journal	Applied Physics Letters
Volume	89
Issue number	9
DOIs	https://doi.org/10.1063/1.2339931
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2339931

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title = "Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes",

abstract = "Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes (DWNTs) synthesized via a plasma irradiation method are investigated by fabricating them as field-effect transistor devices. The authors' results indicate that Cs-encapsulated DWNTs exhibit a high performance n-type characteristic in contrast to ambipolar behavior of pristine DWNTs. Coulomb blockade oscillations are observed on the Cs-encapsulated DWNTs at low temperatures. In addition, it is found that the semiconducting characteristics of the as-synthesized Cs-encapsulated DWNTs can possibly be controllable by adjusting applied negative dc bias voltages during the plasma synthesis process.",

author = "Li, {Y. F.} and R. Hatakeyama and T. Kaneko and T. Izumida and T. Okada and T. Kato",

note = "Funding Information: The authors would like to thank K. Motomiya and K. Tohji for their help in TEM observation. This work was supported by Tohoku University 21st Center of Excellence (COE) Program, Japan, and JSPS-CAS Core-University Program on Plasma and Nuclear Fusion.",

year = "2006",

doi = "10.1063/1.2339931",

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journal = "Applied Physics Letters",

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T1 - Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes

AU - Li, Y. F.

AU - Hatakeyama, R.

AU - Kaneko, T.

AU - Izumida, T.

AU - Okada, T.

AU - Kato, T.

N1 - Funding Information: The authors would like to thank K. Motomiya and K. Tohji for their help in TEM observation. This work was supported by Tohoku University 21st Center of Excellence (COE) Program, Japan, and JSPS-CAS Core-University Program on Plasma and Nuclear Fusion.

PY - 2006

Y1 - 2006

N2 - Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes (DWNTs) synthesized via a plasma irradiation method are investigated by fabricating them as field-effect transistor devices. The authors' results indicate that Cs-encapsulated DWNTs exhibit a high performance n-type characteristic in contrast to ambipolar behavior of pristine DWNTs. Coulomb blockade oscillations are observed on the Cs-encapsulated DWNTs at low temperatures. In addition, it is found that the semiconducting characteristics of the as-synthesized Cs-encapsulated DWNTs can possibly be controllable by adjusting applied negative dc bias voltages during the plasma synthesis process.

AB - Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes (DWNTs) synthesized via a plasma irradiation method are investigated by fabricating them as field-effect transistor devices. The authors' results indicate that Cs-encapsulated DWNTs exhibit a high performance n-type characteristic in contrast to ambipolar behavior of pristine DWNTs. Coulomb blockade oscillations are observed on the Cs-encapsulated DWNTs at low temperatures. In addition, it is found that the semiconducting characteristics of the as-synthesized Cs-encapsulated DWNTs can possibly be controllable by adjusting applied negative dc bias voltages during the plasma synthesis process.

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Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes

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