Electronic transport properties of Cu/MnOx/SiO2/p-Si MOS devices

V. K. Dixit; K. Neishi; J. Koike

doi:10.1557/proc-1156-d04-11

Electronic transport properties of Cu/MnO_x/SiO₂/p-Si MOS devices

V. K. Dixit, K. Neishi, J. Koike

ENG - Materials Science

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

An ultrathin barrier layer of MnO_x was grown using metal organic chemical vapor deposition (MOCVD) at an interface between Cu and SiO ₂ dielectric. The electronic transport properties of Cu/MnO _x/SiO₂/p-Si metal oxide semiconductor (MOS) devices showed leakage current density within the range of 10^-8-10 ^-7A/cm² up to an electric field of 4MV/cm. The current density remained within the same range after bias temperature aging test at 3MV/cm for 6×10³s at 550K. The capacitance-voltage curves of the MOS device having the MnO_x layer grown at 473K do not show significant shift of flat band voltage after thermal annealing at 673K for 3.6×10³s as well as after bias temperature aging test at 1MV/cm, 550K for 2.4×10³ s. These results indicate that the ultrathin layer of MnO^x is stable under the above conditions and prevents sufficiently Cu ion diffusion into the SiO₂ dielectric.

Original language	English
Title of host publication	Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009
Publisher	Materials Research Society
Pages	105-109
Number of pages	5
ISBN (Print)	9781605111292, 9781605111643
DOIs	https://doi.org/10.1557/proc-1156-d04-11
Publication status	Published - 2009
Event	2009 MRS Spring Meeting - San Francisco, CA, United States Duration: 2009 Apr 13 → 2009 Apr 17

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1156
ISSN (Print)	0272-9172

Conference

Conference	2009 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	09/4/13 → 09/4/17

Access to Document

10.1557/proc-1156-d04-11

Cite this

@inproceedings{7830d50b9c7d4f88866fc116f65b6fd8,

title = "Electronic transport properties of Cu/MnOx/SiO2/p-Si MOS devices",

abstract = "An ultrathin barrier layer of MnOx was grown using metal organic chemical vapor deposition (MOCVD) at an interface between Cu and SiO 2 dielectric. The electronic transport properties of Cu/MnO x/SiO2/p-Si metal oxide semiconductor (MOS) devices showed leakage current density within the range of 10-8-10 -7A/cm2 up to an electric field of 4MV/cm. The current density remained within the same range after bias temperature aging test at 3MV/cm for 6×103s at 550K. The capacitance-voltage curves of the MOS device having the MnOx layer grown at 473K do not show significant shift of flat band voltage after thermal annealing at 673K for 3.6×103s as well as after bias temperature aging test at 1MV/cm, 550K for 2.4×103 s. These results indicate that the ultrathin layer of MnOx is stable under the above conditions and prevents sufficiently Cu ion diffusion into the SiO2 dielectric.",

author = "Dixit, {V. K.} and K. Neishi and J. Koike",

year = "2009",

doi = "10.1557/proc-1156-d04-11",

language = "English",

isbn = "9781605111292",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "105--109",

booktitle = "Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009",

note = "2009 MRS Spring Meeting ; Conference date: 13-04-2009 Through 17-04-2009",

}

Dixit, VK, Neishi, K & Koike, J 2009, Electronic transport properties of Cu/MnO_x/SiO₂/p-Si MOS devices. in Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009. Materials Research Society Symposium Proceedings, vol. 1156, Materials Research Society, pp. 105-109, 2009 MRS Spring Meeting, San Francisco, CA, United States, 09/4/13. https://doi.org/10.1557/proc-1156-d04-11

Electronic transport properties of Cu/MnO_x/SiO₂/p-Si MOS devices. / Dixit, V. K.; Neishi, K.; Koike, J.
Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009. Materials Research Society, 2009. p. 105-109 (Materials Research Society Symposium Proceedings; Vol. 1156).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Dixit, V. K.

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N2 - An ultrathin barrier layer of MnOx was grown using metal organic chemical vapor deposition (MOCVD) at an interface between Cu and SiO 2 dielectric. The electronic transport properties of Cu/MnO x/SiO2/p-Si metal oxide semiconductor (MOS) devices showed leakage current density within the range of 10-8-10 -7A/cm2 up to an electric field of 4MV/cm. The current density remained within the same range after bias temperature aging test at 3MV/cm for 6×103s at 550K. The capacitance-voltage curves of the MOS device having the MnOx layer grown at 473K do not show significant shift of flat band voltage after thermal annealing at 673K for 3.6×103s as well as after bias temperature aging test at 1MV/cm, 550K for 2.4×103 s. These results indicate that the ultrathin layer of MnOx is stable under the above conditions and prevents sufficiently Cu ion diffusion into the SiO2 dielectric.

AB - An ultrathin barrier layer of MnOx was grown using metal organic chemical vapor deposition (MOCVD) at an interface between Cu and SiO 2 dielectric. The electronic transport properties of Cu/MnO x/SiO2/p-Si metal oxide semiconductor (MOS) devices showed leakage current density within the range of 10-8-10 -7A/cm2 up to an electric field of 4MV/cm. The current density remained within the same range after bias temperature aging test at 3MV/cm for 6×103s at 550K. The capacitance-voltage curves of the MOS device having the MnOx layer grown at 473K do not show significant shift of flat band voltage after thermal annealing at 673K for 3.6×103s as well as after bias temperature aging test at 1MV/cm, 550K for 2.4×103 s. These results indicate that the ultrathin layer of MnOx is stable under the above conditions and prevents sufficiently Cu ion diffusion into the SiO2 dielectric.

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