Electrostatic charge carrier injection into the charge-ordered organic material α-(BEDT-TTF) 2I 3

Motoi Kimata; Takuma Ishihara; Hiroyuki Tajima

doi:10.1143/JPSJ.81.073704

Electrostatic charge carrier injection into the charge-ordered organic material α-(BEDT-TTF) ₂I ₃

Motoi Kimata, Takuma Ishihara, Hiroyuki Tajima

Research output: Contribution to journal › Review article › peer-review

4 Citations (Scopus)

Abstract

We have fabricated a field effect transistor structure using the charge-ordered (CO) organic material α-(BEDTTTF) ₂I ₃ to investigate the effects of electrostatic carrier injection. We have observed both n-type and bipolar behaviors in the CO state, whereas, previously, only n-type characteristics were reported. The present results indicate that the transfer characteristics for a negative gate voltage, i.e., hole transport characteristics, are highly dependent on the interface conditions between α-(BEDT-TTF) ₂I ₃ and the electrodes and/or gate insulator. In addition, the activation energy of the CO state is essentially independent of V _SG. This result suggests the robustness of the CO state to electrostatic charge carrier injection.

Original language	English
Article number	073704
Journal	journal of the physical society of japan
Volume	81
Issue number	7
DOIs	https://doi.org/10.1143/JPSJ.81.073704
Publication status	Published - 2012 Jul
Externally published	Yes

Keywords

Charge order
Electrostatic charge carrier injection
Field effect transistor structure
Organic conductor
α-(BEDT-TTF) I

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1143/JPSJ.81.073704

Cite this

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title = "Electrostatic charge carrier injection into the charge-ordered organic material α-(BEDT-TTF) 2I 3 ",

abstract = "We have fabricated a field effect transistor structure using the charge-ordered (CO) organic material α-(BEDTTTF) 2I 3 to investigate the effects of electrostatic carrier injection. We have observed both n-type and bipolar behaviors in the CO state, whereas, previously, only n-type characteristics were reported. The present results indicate that the transfer characteristics for a negative gate voltage, i.e., hole transport characteristics, are highly dependent on the interface conditions between α-(BEDT-TTF) 2I 3 and the electrodes and/or gate insulator. In addition, the activation energy of the CO state is essentially independent of V SG. This result suggests the robustness of the CO state to electrostatic charge carrier injection.",

keywords = "Charge order, Electrostatic charge carrier injection, Field effect transistor structure, Organic conductor, α-(BEDT-TTF) I",

author = "Motoi Kimata and Takuma Ishihara and Hiroyuki Tajima",

year = "2012",

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doi = "10.1143/JPSJ.81.073704",

language = "English",

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journal = "Journal of the Physical Society of Japan",

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T1 - Electrostatic charge carrier injection into the charge-ordered organic material α-(BEDT-TTF) 2I 3

AU - Kimata, Motoi

AU - Ishihara, Takuma

AU - Tajima, Hiroyuki

PY - 2012/7

Y1 - 2012/7

N2 - We have fabricated a field effect transistor structure using the charge-ordered (CO) organic material α-(BEDTTTF) 2I 3 to investigate the effects of electrostatic carrier injection. We have observed both n-type and bipolar behaviors in the CO state, whereas, previously, only n-type characteristics were reported. The present results indicate that the transfer characteristics for a negative gate voltage, i.e., hole transport characteristics, are highly dependent on the interface conditions between α-(BEDT-TTF) 2I 3 and the electrodes and/or gate insulator. In addition, the activation energy of the CO state is essentially independent of V SG. This result suggests the robustness of the CO state to electrostatic charge carrier injection.

AB - We have fabricated a field effect transistor structure using the charge-ordered (CO) organic material α-(BEDTTTF) 2I 3 to investigate the effects of electrostatic carrier injection. We have observed both n-type and bipolar behaviors in the CO state, whereas, previously, only n-type characteristics were reported. The present results indicate that the transfer characteristics for a negative gate voltage, i.e., hole transport characteristics, are highly dependent on the interface conditions between α-(BEDT-TTF) 2I 3 and the electrodes and/or gate insulator. In addition, the activation energy of the CO state is essentially independent of V SG. This result suggests the robustness of the CO state to electrostatic charge carrier injection.

KW - Charge order

KW - Electrostatic charge carrier injection

KW - Field effect transistor structure

KW - Organic conductor

KW - α-(BEDT-TTF) I

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