TY - JOUR
T1 - Elimination of Voids at Interface of β-SiC Films and Si Substrate by Laser CVD
AU - Zhu, Peipei
AU - Xu, Qingfang
AU - Guo, Han
AU - Tu, Rong
AU - Zhang, Song
AU - Yang, Meijun
AU - Zhang, Lianmeng
AU - Goto, Takashi
AU - Yan, Jiasheng
AU - Li, Shusen
N1 - Funding Information:
© Wuhan University of Technology and Springer-Verlag GmbH Germany, Part of Springer Nature 2018 (Received: June 10, 2017; Accepted: Aug. 12, 2017) ZHU Peipei(朱佩佩): Ph D; E-mail: 523192486@qq.com *Corresponding author: TU Rong(涂溶): Prof.; Ph D; E-mail: turong@whut.edu.cn Funded by the National Natural Science Foundation of China (Nos.51372188 and 51521001), the 111 Project (B13035), the International Science & Technology Cooperation Program of China (2014DFA53090), the Natural Science Foundation of Hubei Province, China (2016CFA006), the National Key Research and Development Program of China (2017YFB0310400), and the Fundamental Research Funds for the Central Universities (WUT: 2017II43GX, 2017III032)
PY - 2018/4/1
Y1 - 2018/4/1
N2 - Void-free β-SiC films were deposited on Si(001) substrates by laser chemical vapor deposition using hexamethyldisilane (HMDS) as the precursor. The effect of the time of introducing HMDS, i e, the substrate temperature when HMDS introduced (Tin), on the preferred orientation, surface microstructure and void was investigated. The orientation of the deposited SiC films changed from <001> to random to <111> with increasing Tin. The surface showed a layer-by-layer microstructure with voids above Tin ⩾ 773 K, and then transformed into mosaic structure without voids at Tin= 298 K. The mechanism of the elimination of voids was discussed. At Tin =298 K, Si surface can be covered by an ultrathin SiC film, which inhibits the out-diffusion of Si atoms from substrate and prohibites the formation of the voids.
AB - Void-free β-SiC films were deposited on Si(001) substrates by laser chemical vapor deposition using hexamethyldisilane (HMDS) as the precursor. The effect of the time of introducing HMDS, i e, the substrate temperature when HMDS introduced (Tin), on the preferred orientation, surface microstructure and void was investigated. The orientation of the deposited SiC films changed from <001> to random to <111> with increasing Tin. The surface showed a layer-by-layer microstructure with voids above Tin ⩾ 773 K, and then transformed into mosaic structure without voids at Tin= 298 K. The mechanism of the elimination of voids was discussed. At Tin =298 K, Si surface can be covered by an ultrathin SiC film, which inhibits the out-diffusion of Si atoms from substrate and prohibites the formation of the voids.
KW - HMDS
KW - laser CVD
KW - voids
KW - β-SiC
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U2 - 10.1007/s11595-018-1829-4
DO - 10.1007/s11595-018-1829-4
M3 - Article
AN - SCOPUS:85046549145
SN - 1000-2413
VL - 33
SP - 356
EP - 362
JO - Journal Wuhan University of Technology, Materials Science Edition
JF - Journal Wuhan University of Technology, Materials Science Edition
IS - 2
ER -